Nippon Sheet Glass Company, Limited

Akihiro Hishinuma

Yasuto Sakai

Koichiro Nakamura

Hideo Kawahara

Shinji Kamiya

Ryohei Ogawa

Toshiaki Hashimoto

Shigehito Deki

Kiyoshi Miyashita

Masamichi Kezuka

Hirotsugu Nagayama

Takuji Goda

Yukihito Nagashima

Koichi Sakaguchi

Shigeki Nakagaki

Tetsuro Yoshii

Tsutomu Sakai

Juichi Ino

Akihide Sano

Toyo Yano

Shigeo Hayashi

It is an object of the present invention to provide a beneficial composition in order to detoxify the harmful compound containing arsenic etc. effectively and systematically and a method for detoxifying a harmful compound by using the composition. The composition for the alkylation according to the present invention is characterized in that the composition contains a cobalt complex. The method of detoxifying the harmful compound according to the present invention is characterized in that a harmful compound containing at least one element selected from the groups comprising arsenic, antimony and selenium is detoxified by the alkylation of the harmful compound, in the presence of the composition according to the present invention.

Composition for alkylation and method for detoxifying a harmful compound by using the composition

It is an object of the present invention to provide a method of detoxifying a methyl compound comprising arsenic etc., effectively and systematically. The method of detoxifying a methyl compound according to the present invention is characterized in that an organic halogenated compound is reacted with a methyl compound comprising at least one element selected from the groups comprising arsenic, antimony and selenium to convert the methyl compound into more harmless substances. Furthermore, in a preferred embodiment of the method of detoxifying a methyl compound according to the present invention, the method is characterized in that the element is arsenic.

Method of detoxifying a methyl compound

The present disclosure describes a method for recovering metals such as gallium, indium and aluminum from III-V group compound semiconductors or semiconducting materials thereof containing arsenic, antimony and/or selenium. The method includes the step of adsorbing the arsenic, antimony and selenium selectively to an adsorbent containing the rare-earth metal compound with the use of the adsorbent.

Method for recovering metal

There is disclosed a photocatalyst which comprises a substrate having a photocatalytic function and metallic nanocolloid particles that are supported on the substrate by the use of a metallic nanocolloid liquid substantially free from a protective colloid formation agent. A highly active photocatalyst containing metallic ultrafine particles is provided by bringing a substrate such as fine particles having a photocatalytic function into contact with a metallic nanocolloid liquid which is substantially free from a protective colloid formation agent, and which has favorable dispersion stability even if containing metallic nanocolloid particles in a relatively high concentration. Accordingly the photocatalyst containing metallic ultrafine particles can be produced at a low cost without being restricted on the place of production.

Photocatalyst containing metallic ultrafine particles and process for producing said photocatalyst

The present invention provides a metal nanocolloidal liquid characterized by containing a dispersion medium and nanocolloidal metal particles, and containing substantially no protective colloid-forming agent; and a method for producing a metal-on-carrier, characterized by including causing nanocolloidal metal particles to be carried on a carrier by use of the metal nanocolloidal liquid. According to the production method, nanocolloidal metal particles can be efficiently caused to be carried on a carrier, and a metal-on-carrier which is useful in a variety of fields can be industrially advantageously produced.

Metal nanocolloidal liquid, method for producing metal support and metal support

A heat-resistant pipe is arranged so as to traverse below a glass ribbon in a float bath of molten tin, and bubbles emanate from the heat-resistant pipe, thereby making the bottom surface (which is in contact with the tin) uneven. Alternatively, the bottom surface is made uneven with a roller for lifting the glass ribbon out of the float bath into an annealing furnace. In addition to these operations for making the glass surface uneven, a film can be applied to the top face of the glass ribbon (i.e. the surface that is not in contact with the tin) by CVD, supplying a mixed gas of raw material from coaters. Thus, the invention makes it possible to manufacture a glass sheet having an uneven surface efficiently, using a technique for processing the surface of a glass sheet that is suitable for a production line for float glass.

Method for manufacturing a glass sheet having an uneven surface

A window glass for an automobile and the window structure capable of clearly indicating visually warning by a high mounted stop lamp, etc., while having a heat-shielding function and a privacy protecting function are provided. A heat-shielding film is formed on the concave side (inside the automobile) of the window glass for an automobile, the film is partially removed or modified, and the visible light transmission of the removed or modified portion is increased to a predetermined value than the visible light transmission of other film-formed portion.

Window glass for automobile and window structure of automobile using the

Method for producing silicon dioxide film which prevents escape of Si

A process for forming a silica film on a substrate which comprises bringing the substrate into contact with an aqueous solution of hydrosilicofluoric acid supersaturated with silica, wherein the supersaturated solution is filled in an inner vessel which is opened downwardly so as to allow the introduction of the substrate thereinto and is arranged inside an outer vessel at a distance from the side walls and the bottom of the outer vessel, and a liquid material having substantially no reactivity and miscibility with the supersaturated solution and having a higher specific gravity than the supersaturated solution is charged in the outer vessel so as to retain the supersaturated solution in the inner vessel without flowing down toward the bottom of the outer vessel, and whereby the supersaturated solution is prevented from being exposed to the atmosphere and accordingly the process can be practiced at high deposition rate in high efficiency and yield without evaporating effective Si components which result in formation of silica particles outside the vessels.

Process for forming silica films

A process for depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by heating a hydrosilicofluoric acid solution substantially saturated with silicon dioxide which has a temperature of not more than 0.degree. C., to a temperature of not less than 25.degree. C.

Process for depositing silicon dioxide films

A film of the oxide of a metal selected from the group consisting of Sn, Zr, In, V, Cr, Mn, Fe, Co, Ni, and Cu is deposited on the surface of a substrate by a method which comprises establishing contact between the substrate and a treating liquid containing fluorine and the metal selected as described above thereby having the oxide of the metal dissolved to supersaturation therein.

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Tokyo, Japan

Akihiro Hishinuma