Oki Data Corporation

Akihiro Hashimoto

Mitsuhiko Ogihara

Masaaki Sakuta

Tomohiko Sagimori

Satoru Tanaka

A method is used for releasing a graphene layer from a substrate. A graphene layer is first formed on a surface of a first substrate. A metal layer is then formed on a surface of the graphene layer. A pulling force is then applied to the metal layer to detach the graphene layer from the first substrate. The released graphene layer is bonded by intermolecular force onto a surface of a second substrate separate from the first substrate or onto a surface of a bonding layer formed on the surface of the second substrate. The metal layer is then removed, by for example, etching.

Graphene wafer, method for manufacturing the graphene wafer, method for releasing a graphene layer, and method for manufacturing a graphene device

In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer.

Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof

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Fukui, Japan

Akihiro Hashimoto