Ricoh Company, Ltd.

Japan Atomic Energy Agency

Ricoh Research Institute of General Electronics

Akihiro Fuse

Seiji Sarayama

Hirokazu Iwata

Futoyoshi Kou

Junichi Azumi

Junichi Saito

Masafumi Kumano

Koichi Haga

Yutaka Sano

Kuniaki Ara

Yasuyuki Shindoh

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

Crystal growth apparatus and manufacturing method of group III nitride crystal

A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Group III nitride crystal and manufacturing method thereof

In a method of producing a group III nitride crystal in which a melt holding vessel where a melt containing a group III metal and flux is held is accommodated in a reaction vessel and a group III nitride crystal is produced as a substance containing nitrogen is supplied from an outside to the reaction vessel through a pipe, the method includes a step of forming an accumulated part of a liquid in the pipe to thereby temporarily close the pipe before growing the group III nitride crystal in the melt holding vessel.

Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal

A disclosed magnetic sensor includes a substrate having a plane surface and multiple sloping surfaces; multiple soft magnetic films each disposed on a different one of the sloping surfaces and magnetized according to strength of a magnetic field; and multiple detecting devices each disposed on the plane surface, including a free layer and a pinned layer and configured to produce a detection output according to magnetization of the free layer and the pinned layer. Each of the soft magnetic films is magnetically coupled with the free layer of a different one of the detecting devices. The pinned layers of the detecting devices have magnetization directions different from each other.

Mobile information terminal apparatus and magnetic sensor, including magnetoresistive detecting device

In a crystal preparing device, a crucible holds a mixed molten metal containing alkali metal and group III metal. A container has a container space contacting the mixed molten metal and holds a molten alkali metal between the container space and an outside of the container, the molten alkali metal contacting the container space. A gas supply device supplies nitrogen gas to the container space. A heating device heats the crucible to a crystal growth temperature. The crystal preparing device is provided so that a vapor pressure of the alkali metal which evaporates from the molten alkali metal is substantially equal to a vapor pressure of the alkali metal which evaporates from the mixed molten metal.

Crystal preparing device, crystal preparing method, and crystal

A magnetic sensor including sensor bridge circuits, each including a pair of magnetic field detectors and a pair of fixed resistors. The magnetic field detectors in each bridge circuit are located on the same inclined surface, while the fixed resistors are each located on a different inclined surface. The inclined surface configuration reduces the number of fabrication steps necessary to fabricate the magnetic sensor.

Magnetic sensor including magnetic field detectors and field resistors arranged on inclined surfaces

A sensor module maintaining high detection accuracy. Correction data of a detected magnetic field is updated only in a case that a fluctuation band acquired from an output signal of an acceleration sensor is less than a threshold value and a difference between an azimuth angle acquired from an output signal of a terrestrial magnetism sensor and an inclination angle acquired from an output signal of acceleration sensor is less than the threshold value. Therefore, the correction data is updated only in a case that a magnetic field at a position of a mobile object is stably detected, and an accuracy of the correction data can be maintained.

Sensor module, method of correction therefor, and mobile object including the sensor module

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal in a vessel space thereof, a porous member holding a metal melt by a surface tension thereof in a path through which a vapor of the alkali metal in contact with the metal mixture in the vessel space escapes to an external space, the porous member further supplying a nitrogen source gas fed from outside thereto further to the reaction vessel therethrough and through the metal melt by a pressure difference formed between the vessel space in the reaction vessel and the external space, and a heating apparatus heating the melt mixture to a crystal growth temperature.

Crystal growth apparatus and method of producing a crystal

A method of forming a multilayer interconnection structure includes the steps of forming a contact hole in an interlayer insulation film, depositing the contact hole by a conductive plug of a refractory element, applying a sputter-etching process to the interlayer insulation film to form a tapered part at a top part of the contact hole while using the conductive plug as an etching stopper, and filling the tapered part of the contact hole by a conductor material by a sputtering process.

Fabrication process of a semiconductor device having a multilayered

This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer. This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.

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Miyagi, Japan

Akihiro Fuse