Nippon Mining & Metals Co., Ltd.

Jx Nippon Mining Metals Corporation

Nikko Materials Company, Limited

Akihiro Aiba

Takeo Okabe

Junnosuke Sekiguchi

Hirofumi Takahashi

Kazumi Kawamura

Toru Imori

Hirohito Miyashita

Yoshiyuki Hisumi

Jun Suzuki

Ryu Murakami

Tomoharu Mimura

Ichiroh Sawamura

An electroless plating pretreatment agent that can retain stably Pd(II) over a long period of time in an organic solvent, an electroless plating method using the same that is capable of forming an electroless plated film having excellent adhesion, and an electroless plated object. The electroless plating pretreatment agent contains an organic palladium compound and a coordination compound having a functional group with a metal-capturing capability dissolved in an organic solvent, the coordination compound being selected from the group consisting of the imidazole analogs, polyethyleneamines, ethyleneimines and polyethyleneimines.

Electroless plating pretreatment agent, electroless plating method using same, and electroless plated object

An electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1,500 &#x3bc;m (or more) to 20,000 &#x3bc;m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.

Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion

The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 &#x3bc;m or less or 60 &#x3bc;m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

An electroless palladium plating liquid, with excellent bath stability, that can provide a film with excellent corrosion resistance, solder bondability, and wire bondability is provided. The invention is an electroless palladium plating liquid, containing: a water soluble palladium compound; at least one of ammonia, an amine compound, an aminocarboxylic acid compound, and carboxylic acid as a complexing agent; and bismuth or a bismuth compound as a stabilizer. Preferably the electroless palladium plating liquid further contains at least one of hypophosphorous acid, phosphorous acid, formic acid, acetic acid, hydrazine, a boron hydride compound, an amine borane compound, and salts thereof as a reducing agent.

Electroless palladium plating liquid

The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 &#x3bc;m or less or 60 &#x3bc;m or more or a non-recrystallized anode. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion

There is provided a cyanide-free immersion type electroless gold plating liquid that is low in toxicity, can be used near a neutral ph, and has a good solder adhesion and plating film adhesion. The electroless gold plating liquid contains a cyanide-free water-soluble gold compound and a pyrosulfurous acid compound. The plating liquid may further contain a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid or an alkali metal, alkaline earth metal, ammonium, or another such salt thereof can be used as the pyrosulfurous acid compound.

Electroless gold plating liquid

The invention provides a displacement electroless gold plating solution that is low in toxicity, can be used at a pH near to neutrality, and affords good solder adhesion and film adhesion. The displacement electroless gold plating solution contains a non-cyanide water-soluble gold compound and a hydrogensulfite compound. Preferably, the plating solution further contains a thiosulfuric acid compound or an aminocarboxylic acid compound. Sodium hydrogensulfite, potassium hydrogensulfite, ammonium hydrogensulfite or the like can be used as the hydrogensulfite compound.

Electroless gold plating solution

The present invention provides a surface-treating agent which improves heat resistance, adhesiveness to resin and solder wettability. The surface-treating agent for metal contains a tetrazole derivative represented by the following formula and/or a salt thereof, wherein Rand Reach independently represent a hydrogen atom, a halogen atom, or an alkyl group or an aryl group, etc., which each have a carbon number of not more than 10, and a group having a halogen atom, a hydroxyl group, a carboxyl group, an amino group or a mercapto group added thereto, or represent an amino group, a mercapto group, a hydroxyl group or a carboxyl group; and Rrepresents a bond or an alkylene group, etc., which each have a carbon number of not more than 10, and a group having a halogen atom, a hydroxyl group, a carboxyl group, an amino group, a mercapto group, an azo group (&#x2014;N&#x2550;N&#x2014;), a sulfide group (&#x2014;S&#x2014;), or a disulfide group (&#x2014;S&#x2014;S&#x2014;) added thereto, or represents an azo group, a sulfide group, or disulfide group, and may contain a metal or metal compound.

Surface-treating agent for metal

A cyanide-free immersion type electroless gold plating solution that is less toxic can be used at near neutrality and gives an excellent and improved solder adhesion and plated film adhesion is provided. The electroless gold plating solution contains a cyanide-free water-soluble gold compound, a pyrosulfurous acid compound and a thiosulfuric acid compound. This plating solution preferably further contains a sulfurous acid compound and an aminocarboxylic acid compound. Pyrosulfurous acid and alkali metal salts, alkaline-earth metal salts, ammonium salts and other salts thereof can be used as the pyrosulfurous acid compound.

The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 &#x3bc;m (or more) to 20000 &#x3bc;m in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

Electrolytic copper plating method, phosphorus-containing anode for electrolytic copper plating, and semiconductor wafer plated using them and having few particles adhering to it

An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 &#x3bc;m when the anode current density during electrolysis is 3 A/dmor more, and making the grain size of the phosphorous copper anode 5 to 1500 &#x3bc;m when the anode current density during electrolysis is less than 3 A/dm. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Electrolytic copper plating method, phosphorous copper anode for electrolytic plating method, and semiconductor wafer having low particle adhesion plated with said method and anode

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Ibaraki, Japan

Akihiro Aiba