Chiba University

Fujikura Limited

Akihiko Yoshikawa

Kazuhide Kusakabe

Yoshihiro Ishitani

Koji Omichi

Munehisa Fujimaki

Yoshikazu Kaifuchi

Ke Xu

A photoelectric conversion device which is a semiconductor device comprising a first conductive layer having a first conductivity type; a second conductive layer formed on the first conductive layer and having a second conductivity type; and a photosensitizing layer formed between the first conductive layer and the second conductive layer, wherein charge carriers generated by photoelectric conversion in the photosensitizing layer are freely movable to at least one of the first conductive layer and the second conductive layer.

Photoelectric conversion device

A photoelectric conversion device which inhibits characteristic degradation caused by crystal defects, and an inspection method for crystal defects in photoelectric conversion devices. The photoelectric conversion device is provided with an active layer, and a deactivator contained in the active layer.

Photoelectric conversion device and characteristic inspection method for same

A solar cell is provided with: a first conductivity layer comprising a first conductivity type material; a sensitizer layer formed on the first conductivity layer; and a second conductivity layer comprising a second conductivity type material and formed on the sensitizer layer. At least one of the first conductivity layer, the second conductivity layer and the sensitizer layer has a first semiconductor of a first film thickness and a second semiconductor of a second film thickness.

A method of producing a zinc oxide-based semiconductor crystal, including: introducing at least zinc and oxygen on a surface of a substrate; and growing a zinc oxide-based semiconductor crystal on the substrate, wherein a total or partial portion of the zinc is ionized in a vacuum atmosphere of 1&#xd7;10Torr or less and is introduced to the surface of the substrate to grow the ZnO based semiconductor crystal. As a result, it is possible to provide a method of producing a zinc oxide based semiconductor crystal capable of growing a zinc oxide semiconductor crystal having excellent surface flatness and crystallinity and including an extremely small amount of impurities at a high growth rate.

Method of producing zinc oxide semiconductor crystal

The object of the invention is to provide a semiconductor device having a nitride-based hetero-structure in which an epitaxial nitride film has a uniformly flat surface at a single molecule level, and a method of easily fabricating such a device. The object of the invention is achieved by providing a semiconductor device comprising a sapphire substrate whose c-surface is modified to be nitride-surfaced, GaN buffer layer, N polarity GaN layer, N polarity AlN layer, N polarity InN/InGaN multi-layered device structure, Al polarity AlN layer, and GaN cap layer.

Growing community of inventors

Chiba, Japan

Akihiko Yoshikawa