Mitsubishi Electric Corporation

Sanyo Electric Co., Ltd.

Akihiko Yamashita

Rei Yoneyama

Yoshitaka Kimura

Ryo Goto

Akira Goto

Mariko Ono

Takehiro Araki

Nobuchika Aoki

Masayuki Ando

Takami Otsuki

Masako Wakisaka

Hideki Tsukamoto

Hirotsugu Murashima

Keisuke Eguchi

Hiroshi Tsunoda

Haruhiko Murakami

Hideki Kasamatsu

Shinichi Matsuura

Katsunori Hirase

Motoaki Asao

Masako Otsuki

Yosuke Mizutani

Takahiro Kondo

Takehiko Asano

Akira Urakoshi

Syuji Yanase

Shinichiro Kitagawa

A semiconductor module includes an insulating substrate including an insulating layer, a first metal pattern formed on an upper surface of the insulating layer, and a second metal pattern formed on a lower surface of the insulating layer, a semiconductor chip that is formed of SiC and is fixed to the first metal pattern with a first metal joining member, and a heat sink that is fixed to the second metal pattern with a second metal joining member, wherein the semiconductor chip has a thickness that is equal to or larger than 0.25 mm and equal to or smaller than 0.35 mm, and the insulating layer has a thickness that is larger than the thickness of the semiconductor chip by a factor of 2.66 inclusive to 5 inclusive.

Semiconductor module and power converter

An electrode terminal includes a body and a first bonding part. The body includes a first metal material. Then, the first bonding part is bonded to one end of the body, and includes a second metal material which is a clad material other than the first metal material. The first bonding part is ultrasonically bondable to a first bonded member. An elastic part which is elastically deformable is provided between the one end of the body and the other end of the body.

Electrode terminal, semiconductor device, and power conversion apparatus

Semiconductor device

According to the present invention, a semiconductor apparatus includes a semiconductor device, a case surrounding the semiconductor device, a spring terminal including a first connection portion extending to a top surface of the case, and a second connection portion provided on the top surface of the case and a control substrate provided on the second connection portion, wherein the first connection portion is connected to the semiconductor device, the second connection portion includes a first end connected to an end of the first connection portion, and a second end opposite to the first end, the second connection portion being a flat plate and having an elastic force using the first end as a supporting point, the second end contacts the control substrate with an elastic force, and the second connection portion has a constriction structure having a notch formed in a side surface along a longitudinal direction.

Semiconductor apparatus

A semiconductor apparatus includes: a case made of resin; an insert terminal including an external terminal portion embedded in the case and having a first terminal exposed from the case, and an internal terminal portion bent in a L shape with respect to a second terminal of the external terminal portion and having a first surface exposed from the case and an anchor part in close contact with the case; and a bonding wire bonded to the first surface of the internal terminal portion.

A semiconductor device includes a case, a circuit substrate set in the case and having an electric circuit formed thereon, and a plurality of terminals arranged in the case by being spaced apart from each other, each terminal having a base portion electrically connected to the electric circuit in the case, and a trunk portion bent by forming a fold between the base portion and the trunk portion so as to rise from the base portion at the end of the base portion, the trunk portion having a press-fit portion formed at its distal end, wherein the fold is inclined relative to a longitudinal axis of the base portion, and wherein restitution directions in which the press-fit portions restitute from their contractions caused by press fitting are turned aside one from another between each adjacent pair of the terminals.

Press-fit terminal, semiconductor device, power conversion apparatus and method of manufacturing press-fit terminal

It is an object to provide a power semiconductor module having a case shared for base plates of different sizes and having a high-stability base plate. The power semiconductor module according to the present invention includes: a base plate; an insulating substrate disposed on a first main surface of the base plate; a semiconductor chip disposed on an insulating substrate; a case for enclosing the base plate except a second main surface of the base plate facing the first main surface, the insulating substrate, and the semiconductor chip; and a spacer provided between the outer periphery of the base plate and the inner periphery of the case and in contact with both. The spacer has a bonding surface with a side surface of the base plate and the first main surface in the contact with the outer periphery of the base plate.

Power semiconductor module comprising a case, base plate, and spacer

A power module includes: a base plate having a front surface provided with positioning wire bonding portions; an insulating substrate provided with hole portions accommodating the positioning wire bonding portions on a side of a back surface facing the base plate, and fixed to the base plate with being positioned with respect to the base plate by the hole portions accommodating the positioning wire bonding portions; and a semiconductor chip arranged on a side of a front surface of the insulating substrate opposite to the back surface.

Semiconductor module

Growing community of inventors

Hyogo, Japan

Akihiko Yamashita