Ebara Corporation

Akihiko Ogawa

Taro Takahashi

Yoichi Kobayashi

Shinrou Ohta

Yuta Suzuki

Nobuyuki Takada

Yasumasa Hiroo

Mitsunori Sugiyama

Yuji Yagi

Shinpei Tokunaga

Ryuichiro Mitani

Motohiro Niijima

Shigeyuki Furuya

A first and a second substrate polishing apparatus and are provided with a film thickness sensor for measuring a film thickness of layer to be polished and polish the layer by pressing the substrate against a polishing pad. The first substrate polishing apparatus outputs difference between output value of the film thickness sensor when an underlayer is exposed and output value of the film thickness sensor when the substrate is not present, as a first offset value. The second substrate polishing apparatus has a storage unit that stores information of the first offset value, an output correction unit that corrects the output value from the film thickness sensor based on the first offset value, and an end point detection unit that outputs control signal indicating end point of substrate polishing when measured value of the film thickness of the layer calculated based on the corrected output value reaches target value.

Substrate polishing system, substrate polishing method and substrate polishing apparatus

A design method of a semiconductor manufacturing apparatus which can satisfy a specification required by a user is disclosed. The design method of the semiconductor manufacturing apparatus includes creating a program setting file; creating a program installer from the program setting file; operating a processing unit of the semiconductor manufacturing apparatus; specifying a sensor corresponding to the processing unit based on the operation of the processing unit; creating a sensor setting file storing information obtained by specifying the sensor; comparing a content of a requirement specification and a content of the sensor setting file to confirm a consistency between the content of the requirement specification and the content of the sensor setting file; and introducing a program into a memory of a controller by the program installer when the content of the requirement specification and the content of the sensor setting file are consistent with each other.

Method of semiconductor manufacturing apparatus and non-transitory computer-readable storage medium storing a program of causing computer to execute design method of semiconductor manufacturing apparatus

A polishing apparatus of the present disclosure polishes a polishing target by pressing the polishing target against a polishing pad. An eddy current sensor measures an impedance that is changeable according to a change of a film thickness of the polishing target, at a plurality of positions of the polishing target, and outputs measurement signals. A difference calculator generates data corresponding to a film thickness based on a measurement signal. The difference calculator calculates a difference between data at different times based on measurement signals output by the eddy current sensor at different times at a center of the polishing target. An end point detector detects a polishing end point indicating the end of polishing based on the difference calculated by the difference calculator.

Polishing apparatus and polishing method

A method monitors a change in thickness of a conductive film brought into sliding contact with a polishing surface of a polishing pad using an eddy current sensor. The output signal of the eddy current sensor includes two signals corresponding to a resistance component and an inductive reactance component of an impedance of an electric circuit including a coil of the eddy current sensor. The method includes acquiring the output signal of the eddy current sensor when the eddy current sensor is facing the conductive film, defining the two signals as coordinates on a coordinate system, repeating the acquiring of the output signal and the defining of the coordinates, determining a center of curvature of an arc specified by at least three sets of coordinates on the coordinate system, determining an angle of inclination of a line connecting the center of curvature and a latest one of the at least three sets of coordinates, and monitoring a change in thickness of the conductive film by monitoring a change in the angle of inclination.

Polishing monitoring method, polishing apparatus and monitoring apparatus

A polishing method polishes and planarizes a substrate. The substrate is pressed against a polishing surface on a rotating polishing table. During polishing, the polishing table is rotated, and the surface, being polished, of the substrate is scanned by an eddy current sensor provided in the polishing table. An output of the eddy current sensor is monitored, and substrate damage is detected from a change in the output of the eddy current sensor. Further, an output of an end point detecting sensor obtained by scanning the surface of the substrate is monitored, and the polishing end point is detected from a change in the output of the end point detecting sensor. After detecting the polishing end point, an output of the end point detecting sensor or another sensor is monitored, and detecting a film left on a part of the substrate is performed.

Polishing method and apparatus

A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.

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Tokyo, Japan

Akihiko Ogawa