Sumitomo Electric Industries, Limited

Akihiko Namba

Takahiro Imai

Yoshiki Nishibayashi

Natsuo Tatsumi

Yoshiyuki Yamamoto

Hisao Takeuchi

Kiichi Meguro

Keisuke Tanizaki

The present invention relates to an electron emitting device having a structure for efficiently emitting electrons. The electron emitting device has a substrate comprised of an n-type diamond, and a pointed projection provided on the substrate. The projection comprises a base provided on the substrate side, and an electron emission portion provided on the base and emitting electrons from the tip thereof. The base is comprised of an n-type diamond. The electron emission portion is comprised of a p-type diamond. The length from the tip of the projection (electron emission portion) to the interface between the base and the electron emission portion is preferably 100 nm or less.

Electron emitting device with projection comprising base portion and electron emission portion

An n-type diamond epitaxial layeris formed by processing a single-crystalline {100} diamond substrateso as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.

Method of fabricating n-type semiconductor diamond, and semiconductor diamond

A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.

Diamond substrate and manufacturing method thereof

A method for production includes a step for forming concave molds on a surface of a substrate and a step for growing a diamond heteroepitaxially on the substrate in an atmosphere containing a doping material. The crystal structure of the slope of the concave molds of the substrate can have the cubic system crystal orientation (), and the doping material is phosphorous. Further, the substrate is Si, and the slope of the molds can be the Si() face. The diamond electron emission device contains projection parts on the surface thereof, where a slope of the projection partscontains a diamond () face, and flat parts, which are not the projection parts, contain face orientations other than () face or () face and grain boundaries.

Process for producing diamond electron emission element and electron emission element

Concerns lithium-doped diamond: Low-resistivity n-type semiconductor diamond doped with lithium and nitrogen, and a method of manufacturing such diamond are provided. Low-resistivity n-type semiconductor diamond containing 10cmor more of lithium atoms and nitrogen atoms together, in which are respectively doped lithium atoms into carbon-atom interstitial lattice sites, and nitrogen atoms into carbon-atom substitutional sites, with the lithium and the nitrogen holding arrangements that neighbor each other. To obtain low-resistivity n-type semiconductor diamond, in a method for the vapor synthesis of diamond, photodissociating source materials by photoexcitation utilizing vacuum ultraviolet light and irradiating a lithium source material with an excimer laser to scatter and supply lithium atoms enables the diamond to be produced.

Growing community of inventors

Itami, Japan

Akihiko Namba