Kaneka Corporation

Kanegafuchi Chemical Industry Co., Ltd.

Akihiko Nakajima

Yoshihisa Tawada

Masashi Yoshimi

Yuko Tawada

Jun Takada

Kenji Yamamoto

Katsuhiko Hayashi

Hideki Matsuo

Tomomi Meguro

Takayuki Suzuki

Naoki Kadota

Tsukasa Makino

Keizo Asaoka

Kazuhiko Umeda

Nobusato Kobayashi

Seiichi Kinoshita

Nobuhisa Ohta

A glass building material according to the present disclosure includes: a first photovoltaic string of a bifacial light-receiving type which has a shape extending in one direction; a second photovoltaic string of a bifacial light-receiving type which is arranged next to the first photovoltaic string in a width direction, and which has a shape extending in the one direction; a first glass substrate which is configured to cover one surface of the first photovoltaic string and one surface of the second photovoltaic string; and a reflective film which is arranged on at least part of another surface side of the first photovoltaic string and another surface side of the second photovoltaic string, which has a transmittance higher than a reflectance in a visible light region, and which has a reflectance higher than a transmittance in a near-infrared region.

Glass building material

There is provided a photovoltaic module including a transparent substrate and hybrid photovoltaic cells arrayed on the substrate and series connected to each other, the cells including a back electrode facing the substrate, a transparent front electrode intervening between the substrate and the back electrode, a first photovoltaic layer intervening between the front and back electrodes and including an amorphous semiconductor layer, a second photovoltaic layer intervening between the first photovoltaic layer and the back electrode and including a crystalline semiconductor layer, and a conductive interlayer with a light-transmitting-and-reflecting property intervening between the first and second photovoltaic layers and having a thickness in a range of 10 nm to 100 nm and a specific resistance in a range of 1&times;10 &OHgr;&middot;cm to less than 1&times;10 &OHgr;&middot;cm.

Photovoltaic module

A silicon-based thin film photoelectric conversion device includes a substrate , a back electrode having a light reflecting metal film , at least one silicon-based photoelectric conversion unit and a front transparent electrode , wherein at least one of the light reflecting metal film and the front transparent electrode has that surface thereof closer to the silicon-based photoelectric conversion unit provided with convexities and concavities having a level difference therebetween in a range of 0.01 to 2 &mgr;m and a pitch greater than the level difference and no more than 25 times the level difference.

Silicon-based thin-film photoelectric device

A thin film photoelectric converter includes a polycrystalline photoelectric conversion layer (,) and a metal thin film (,) covering one main surface of the polycrystalline photoelectric layer. Polycrystalline photoelectric conversion layer (,) has an average thickness in the range from 0.5 to 20 &mgr;m and at least one of main surfaces of polycrystalline photoelectric conversion layer (,) has a textured surface structure. The textured structure has fine unevenness with level differences smaller than half of the thickness of polycrystalline photoelectric conversion layer (,) and substantially in the range from 0.05 to 3 &mgr;m.

Thin film photoelectric transducer

The invention provides a temperature switch material capable of detecting a very low temperature not higher than 150 K. It also provides a light switch material for detecting light in the ultraviolet region. It further provides a switch material suited for use as a substrate for thin oxide layer formation thereon. The switching material utilizes an abrupt change in photoelectric current as produced upon phase transition of SrTiO.sub.3 at a low temperature. The photoelectric switch or temperature switch utilizes the change in photoconduction spectrum upon irradiation of SrTiO.sub.3 with light in the 3 eV-5 eV ultraviolet region. A switch is available by varying the intensity of irradiating light thereby controlling the transition temperature.

Photoconductive material

This invention relates to a photovoltaic device, such as a solar cell or a photosensor, which comprises an amorphous silicon semiconductor photosensitive layer and, as disposed on respective sides thereof, a transparent electrode and a rear electrode. The rear electrode is a multi-layer structure constructed by alternately successive depositions, each in a thickness of 0.3 to 50 nm, of two or more metals selected from the group consisting of Cu, Ag, and Au. In using such a Cu/Ag multi-layer structure or an Au/Ag multi-layer structure as the rear electrode, the thickness of each Cu or Au layer is controlled at 0.3 to 20 nm and that of each Ag layer at 1 to 50 nm. The total thickness of the rear electrode is 20 nm to 1 .mu.m. This construction insures improved photoelectric conversion efficiency and improved reliability of the device.

Photovoltaic device

Growing community of inventors

Osaka, Japan

Akihiko Nakajima