University of California

Japan Science and Technology Agency

Universitaet Bremen

Akihiko Murai

Steven P DenBaars

Shuji Nakamura

Umesh Kumar Mishra

Lee McCarthy

Daniel Bryce Thompson

Christina Ye Chen

Hisashi Masui

Detlef Hommel

Natalie Nichole Fellows

Stephan Figge

Carsten Kruse

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.

Method for fabricating a direct wafer bonded optoelectronic device

An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.

High light extraction efficiency light emitting diode (LED)

(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method

A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.

Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications

Growing community of inventors

Goleta, CA, United States of America

Akihiko Murai