Panasonic Corporation

Akihiko Murai

Kazuyuki Yamae

Tomoya Iwahashi

Hiroshi Fukshima

Masaharu Yasuda

Masahiro Kume

Tooru Aoyagi

Kiyoshi Fujihara

Akiko Nakamura

The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.

Light emitting device

A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

Light distribution controller, light-emitting device using the same, and method for fabricating light distribution controller

A semi-conductor light emitting devicein the present invention comprises an n-type ZnO substrate, an emission layer, anode, and cathode. The n-type ZnO substratehas a mounting surfaceon one of its surfaces. The emission layeris composed of a p-type GaN filmand an n-type GaN film, and superimposed on the n-type ZnO substratewith the p-type GaN filmdirectly disposed on the mounting surfaceof the n-type ZnO substrate. The anodeis disposed directly on the mounting surfaceof the n-type GaN substratein an ohmic contact therewith and in a spaced relation from the emission layer. The cathodeis disposed on the n-type GaN filmin an ohmic contact therewith. The cathodeand anodeare of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathodeand the anode, and minimizes consumption of metallic materials.

Semiconductor light emitting device including anode and cathode having the same metal structure

A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of &#xbe; of the emission wavelength by the refractive index of the transparent layer.

Semiconductor light emitting element and illuminating apparatus using the same

A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.

A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting elementin accordance with the present invention includes: a light-emitting layerhaving a laminated structure in which a p-type GaN filmand an n-type GaN filmare included; a conductive hexagonal pyramidal baseformed from ZnO and mounting with the light-emitting layer on a bottom surface; an anodejoined to the bottom surfaceof the baseat a position apart from the light-emitting layer; and a cathodemounted on the light-emitting layer. In the semiconductor light-emitting element, the p-type GaN filmis joined to the bottom surfaceof the base, and the cathodeis joined to an N-polar plane of the n-type GaN film, said N-polar plane of the n-type GaN filmbeing an opposite side to the p-type GaN film. In the semiconductor light-emitting element, the N-polar plane of the n-type GaN filmhas a fine peak-valley structureoutside a portion joined to the cathode

Growing community of inventors

Yao, Japan

Akihiko Murai