Taiyo Yuden Co., Ltd.

Akihiko Mochizuki

Hideyo Iida

Masatsugu Suzuki

Keiichi Ida

Shoichiro Hirakuni

An ion sensor and an ion sensor plate provided with an ion sensitive membrane which is characterized in that the ion sensitive membrane contains a material constituting the dissociation equilibrium of Ag/X, and an excessive quantity of an ion sensitive material or an anion scavenger. A coated film of surfactant is provided at the inner face of the passageway communicating with the test liquid-measuring electrode so as to add the surfactant to the test liquid. The plasticizer is added at a ratio of 65 to 80% by weight. The atomic ratio of silver and halogen in the silver halide layer is set to at least 1.2. The particle diameter of the modified silver halide layer is set to at most 1 &mgr;m.

Ion sensor and ion sensor plate

A chemical sensor includes a field effect-type transistor. An extended gate electrode is connected to a gate electrode of the transistor. A sensitive membrane is provided on at least a part of the extended gate electrode. The sensor also includes a reference electrode. Both the extended gate and reference electrodes are formed on a substrate different from the substrate on which the transistor is formed. Divided parts for the chemical sensor wherein the parts of the sensor except for the reference electrode are made independent are also disclosed and claimed. Sensors for simultaneously sensing a number of different chemical substances in a single sample are also disclosed and claimed.

Chemical sensors and their divided parts

An ion sensor includes an ion sensitive membrane formed from a vinyl polymer based compound containing a hydroxyl and/or carboxyl group. The membrane is provided on an extended gate electrode on a gate electrode of a field-effect type transistor. The ion sensor also includes a reference electrode arranged in opposition to the extended gate electrode. The extended gate electrode and reference electrode are formed on a substrate different from the substrate on which the field-effect type transistor is formed. A divided part for an ion sensor is also provided and includes the portions of the ion sensor discussed above except for the reference electrode. The divided part is used with a separate reference electrode.

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Tokyo, Japan

Akihiko Mochizuki