Mitsubishi Materials Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Akihiko Mieda

Nobuyuki Soyama

Katsumi Ogi

Makoto Tsunashima

Hiroshi Ikeda

In the production of ferroelectric PZT or PLZT thin film by the sol-gel method, application of precursor solution (sol) onto a substrate is followed by heat-treatment for pyrolysis at 150.degree.-250.degree. C., 250.degree.-359.degree. C., or 450.degree.-550.degree. C., and further firing for crystallization at 500.degree.-800.degree. C., whereby crystal orientation in the direction of the (111) plane, or the (111) and (100) planes, or the (100) and (200) planes can be effected.

Method of controlling crystal orientation of PZT and PLZT thin films on

Chloropolysilanes can be produced in high yield without forming solid waste materials by contacting silicon materials with chlorine at a temperature of 140.degree..about.300.degree. C. in the presence of copper compound or a mixture thereof.

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Omiya, Japan

Akihiko Mieda