Sharp Kabushiki Kaisha Corporation

Akihiko Kohno

Masao Moriguchi

Kohichi Tanaka

Yuichi Saito

Toshio Mizuki

Disclosed is a thin film transistor that is provided with a gate insulating film that is inexpensive, and that is less likely to have a low-density microcrystalline silicon layer formed thereon due to plasma induced damage, while suppressing fluctuation of a threshold voltage. In a TFT () having the bottom gate structure, since a silicon nitride film () having a natural oxide film () formed on the surface thereof is used as the gate insulating film (), the gate insulating film () is not only capable of preventing the alkali metal ions contained in a glass substrate () from entering the gate insulating film (), but also capable of suppressing a formation of the low-density microcrystalline silicon layer on the surface of a microcrystalline silicon film () on the side in contact with the gate insulating film (). Since the mobility of the microcrystalline silicon film () is increased, the operation speed of the TFT () can be improved. Thus, with the simpler configuration, the TFT () having the same electrical characteristics as those of the conventional TFTs can be provided.

Thin film transistor, method for manufacturing same, and display apparatus

A semiconductor deviceincludes: a substrate; an active layerprovided on the substrateand including a channel region, and a first regionand a second regionthat are respectively located on opposite sides of the channel region; first and second contact layersandrespectively in contact with the first and second regionsandof the active layer; a first electrodeelectrically coupled to the first regionvia the first contact layer; a second electrodeelectrically coupled to the second regionvia the second contact layer; and a gate electrodeprovided such that a gate insulating layeris interposed between the gate electrodeand the active layer, the gate electrodebeing configured to control a conductivity of the channel region. The active layercontains silicon. The semiconductor device further includes an oxygen-containing silicon layerbetween the active layerand the first and second contact layers. The layercontains oxygen at a concentration higher than the active layerand the first and second contact layers

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Osaka, Japan

Akihiko Kohno