Sony Corporation

Sony Semiconductor Solutions Corporation

Satake Corporation

Nec Corporation

Mitsubishi Denki Kabushiki Kaisha

Fdk Corporation

Sony Group Corporation

Akihiko Kato

Yusuke Oike

Mamoru Sato

Tadayuki Taura

Masaki Sakakibara

Takafumi Takatsuka

Satoru Satake

Nobuhiro Matsumoto

Kaoru Shitadera

Hongbo Zhu

Kazuto Nonaka

Yukihiro Kawano

Takeshi Munesada

Yosuke Inomoto

Katsunori Chikamune

Noriyuki Fukushima

Yoshinori Muramatsu

Minoru Hashimoto

Masakazu Kobayashi

Hiroyuki Maehara

Shinichi Yoshimura

Ken Matsumoto

Tsutomu Nishide

Ikuhiro Yamamura

Yuji Goto

Shigeharu Kanemoto

Yoshihiro Tokui

Teruo Matsufuji

Masanori Nakanishi

Hung Luong

Chihiro Yamamoto

Eriko Kato

Toshiyuki Hirai

Ken Matsuoka

Satoru Takashita

Tomohiro Fujisawa

Shinzo Fujii

Yoichiro Kawano

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Solid-state imaging device

An all-solid-state battery includes an electrode body in which a cathode layer that contains a cathode active material and a solid electrolyte, an electrolyte layer that is formed of the solid electrolyte, and an anode layer that contains an anode active material and the solid electrolyte are stacked in this order in an up-down direction, in which the cathode active material is a compound represented by a chemical formula LiFeMPAO, contains at least one metal of Ti, V, Cr, Ni, and Co as the M in the chemical formula, and contains at least one element of B, C, Al, Si, Ga, and Ge as the A in the chemical formula, the x in the chemical formula satisfies 0.8<x≤1, the y in the chemical formula satisfies 0≤y≤0.07, and the anode active material is an anatase titanium oxide represented by a chemical formula TiO.

All-solid-state battery

A light detecting device includes: one or more switch transistors, a first pixel including a first floating diffusion region coupled to a first photoelectric converter through a first transfer transistor, and a first amplification transistor coupled to the first floating diffusion region, a second pixel including a second floating diffusion region coupled to a second photoelectric converter through a second transfer transistor, and a second amplification transistor coupled to the second floating diffusion region, and a third pixel including a third floating diffusion region coupled to a third photoelectric converter through a third transfer transistor, and a third amplification transistor coupled to the third floating diffusion region. A pixel signal is differentially amplified by the first and third amplification transistors. The first and second floating diffusion regions are selectively connected to each other via one of the one or more switch transistors.

Solid-state imaging apparatus and electronic device

A solid-state imaging device is disclosed. In one example, a solid-state imaging device includes a current mirror circuit connected to first and second vertical signal lines, first and second unit pixels connected to the first or the second vertical signal line, a current supply line connected to the first and the second unit pixels, and a constant current circuit connected to the current supply line. The unit pixels each include a photoelectric conversion element, a transfer transistor that transfers an electric charge generated in the photoelectric conversion element, first and second charge accumulation units that accumulate the transferred electric charge, a switching transistor configured to control accumulation of the electric charge by the second charge accumulation unit, and an amplification transistor that causes a voltage corresponding to electric charges accumulated the first and/or the second charge accumulation units to appear in the first or the second vertical signal line.

Solid-state imaging device and electronic apparatus

An imaging device includes a plurality of pixels including a first pixel and a second pixel, and a differential amplifier including a first amplification transistor, a second amplification transistor, and a first load transistor. The first load transistor receives a power source voltage. The imaging device includes a first signal line coupled to the first amplification transistor and the first load transistor, a second signal line coupled to the second amplification transistor, and a first reset transistor configured to receive the power source voltage. A gate of the first reset transistor is coupled to the first load transistor. The first pixel includes a first photoelectric conversion element and the first amplification transistor, and the second pixel includes a second photoelectric conversion element and the second amplification transistor.

Solid-state imaging device, control method thereof, and electronic apparatus

To prevent the black dot phenomenon from occurring in a differential amplification-type solid-state image sensor. A signal-side amplifier transistor generates an output voltage corresponding to a signal current corresponding to one of a pair of differential input voltages by supplying the signal current from an output node to a common-phase node. A reference-side amplifier transistor supplies a reference current corresponding to the other one of the pair of differential input voltages to the common-phase node. A constant current source constantly controls a sum of the signal current and the reference current to be merged at the common-phase node. A bypass control unit connects the output node and the common-phase node and supplies the signal current having a value corresponding to a predetermined limit voltage to the common-phase node in a case in which the output voltage reaches the limit voltage.

Solid-state image sensor, electronic apparatus, and control method of solid-state image sensor

A solid-state image pickup apparatus includes a pixel array unit in which image signal generation pixels for generating analog image signals in response to light irradiated thereupon and correction signal generation pixels for generating analog correction signals for correcting the image signals are arranged in a matrix pattern. A conversion unit performs first conversion that is conversion from the analog image signals generated by the image signal generation pixels arranged in a row in the matrix pattern into digital image signals. The conversion unit further performs second conversion, which is conversion performed at substantially the same time with the first conversion, from the analog correction signals generated by the correction signal generation pixels arranged in a plurality of rows in the matrix pattern into digital correction signals. A correction unit performs correction of the digital image signals with the digital correction signals generated in the plurality of rows.

Solid-state image pickup apparatus and driving method for solid-state image pickup apparatus

A solid-state image pickup element according to the present disclosure includes an analog circuit unit that performs reading of a pixel signal from a unit pixel and to perform A/D conversion processing, a digital circuit unit that performs signal output processing of outputting pixel data after the A/D conversion processing, in parallel with the reading of the pixel signal and the A/D conversion processing, and a control unit that causes the digital circuit unit to perform the processing over a period from a processing start timing to a processing finish timing in the analog circuit unit, while the control unit is controlling a speed of a clock being a criterion for an operation of the digital circuit unit.

Solid-state image pickup element, method of driving solid-state image pickup element, and electronic apparatus

A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

Solid-state image pickup apparatus, signal processing method for a solid-state image pickup apparatus, and electronic apparatus

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Tokyo, Japan

Akihiko Kato