Tokyo Electron Limited

Other

Tohoku University

Akihiko Hiroe

Tadahiro Ohmi

Masaki Hirayama

Naohisa Goto

Kouji Shimomura

Akihiko Tsukada

Mitsuo Kato

Nobuhiro Kuga

Masaki Sugiyama

A microwave plasma processing systemincludes: a processing chamberin which a desired process is applied to a target object using a plasma; a susceptor(stage) in the processing chamberto support the target object; a high-frequency power supplysupplying high-frequency electric power to the susceptor; a capacitorprovided to the susceptor; and a measurement devicemeasuring voltages at the pair of plates of the capacitorwhen high-frequency electric power is supplied from the high-frequency power supplyto the susceptor

Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system

A distributor () includes a square waveguide () to be connected to a microwave oscillator () and a square waveguide () having a plurality of openings () formed in a narrow wall (B). The square waveguide () is hollow. A wave delaying member () having a relative dielectric constant &#x2208;is arranged in the square waveguide (). Narrow walls (A,A) of the two square waveguides () are brought into contact with each other, and a communication hole () through which the two waveguides () communicate with each other is formed in the narrow walls (A,A). The widths of the two waveguides () do not become narrow at their connecting portion even if the width of the communication hole () is decreased. Thus, a band of a frequency that can pass through the connecting portion is suppressed from becoming narrow. Consequently, reflection loss that occurs when the frequency of electromagnetic waves to be input to the distributor () changes can be decreased.

Distributor and distributing method, plasma processing system and method, and process for fabricating LCD

Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35&deg; C.

MOCVD system

Growing community of inventors

Miyagi, Japan

Akihiko Hiroe