Seiko Epson Corporation

Other

Akihiko Ebina

Susumu Inoue

Takafumi Noda

Takashi Yamazaki

Masahiko Tsuyuki

Masahiro Hayashi

Yutaka Maruo

Osamu Kawauchi

Yoko Sato

Junichi Takeuchi

Tadao Kadowaki

Yoshihiko Yokoyama

Kenichi Kurokawa

Masayuki Yamaguchi

Akira Mizuguchi

Yukio Kitahara

Tsuyoshi Tabata

Hidekazu Yanagisawa

A vibrator device includes: a base; a vibrator disposed in the base; and a lid including a substrate having a light transmitting property and a silicon substrate joined to the substrate and a part of the base surrounding the vibrator.

Vibrator device, manufacturing method of vibrator device, electronic device, and vehicle

A vibration device includes a base substrate made of silicon and having a first surface and a second surface facing away from the first surface, a lid bonded to the base substrate, a vibrator disposed at the first surface of the base substrate and accommodated in a space between the base substrate and the lid, and a thermistor element disposed at the base substrate.

Vibration device, electronic apparatus, and vehicle

A vibration element includes: a base; an arm continuous with the base; a first electrode that includes a first layer of titanium nitride and a second layer containing nitrogen, titanium, and oxygen, and is disposed on the arm; an aluminum nitride layer in contact with the second layer; and a second electrode disposed on the aluminum nitride layer.

Vibration element, electronic apparatus, and vehicle

A MEMS element includes a surface silicon layer on which an element is formed and on which a first electrode and a second electrode as element electrodes and an electrode pad connected to the first electrode and the second electrode are disposed, and in which a first wiring through-hole is disposed at a position overlapping with the electrode pad of the surface silicon layer and a wiring electrode electrically connected to the electrode pad is disposed in the first wiring through-hole, in plan view.

MEMS element, sealing structure, electronic device, electronic apparatus, and vehicle

A vibrator element includes a base portion, a vibrating arm extending from the base portion, a first electrode provided on the vibrating arm, a second electrode provided above the first electrode, a piezoelectric body arranged between the first electrode and the second electrode, and an insulating film arranged between the first electrode and the piezoelectric body, in which the material of the first electrode contains TiN, the material of the insulating film contains SiO, and the material of the piezoelectric body contains AlN.

Vibrator element, vibrator, oscillator, electronic apparatus, and moving object

A MEMS device is provided in which, in order to suppress generation of a gas from an inner wall of a space in which a MEMS portion is disposed, the MEMS portion is disposed in a space constituted by at least a silicon nitride film and a silicon film, the silicon film has a first hole, the first hole is filled with a metal film or a metal silicide, and an airtight structure is formed by the metal film or the metal silicide, the silicon nitride film, and the silicon film.

MEMS device and method for manufacturing the same

A semiconductor device is provided in which high breakdown voltage transistors and low voltage driving transistors are formed on the same substrate. The device includes a semiconductor layer, first element isolation regions for defining a high breakdown voltage transistor forming region in the semiconductor layer, second element isolation regions including trench dielectric layers for defining a low voltage driving transistor forming region in the semiconductor layer, high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, low voltage driving transistors formed in the low voltage driving transistor forming region, and offset dielectric layers for alleviating the electric field of the high breakdown voltage transistors formed in the high breakdown voltage transistor forming region, wherein upper ends of the offset dielectric layers are beak shaped.

Semiconductor device and method for manufacturing the same

A semiconductor device manufacturing method is provided including: forming a first impurity layer that becomes first wells in a high breakdown voltage transistor forming region in a semiconductor layer; forming a second impurity layer that becomes offset regions in the high breakdown voltage transistor forming region; forming the first wells and the offset regions by diffusing impurities of the first and second impurity layers by heat treating the semiconductor layer; forming element isolation regions by a trench element isolation method in the semiconductor layer, after forming the first wells and the offset regions; forming first gate dielectric layers in the high breakdown voltage transistor forming region; forming second wells in a low voltage driving transistor forming region in the semiconductor layer; forming second gate dielectric layers in the low voltage driving transistor forming region; and forming gate electrodes in the high breakdown voltage transistor forming region and the low voltage driving transistor forming region.

Method for manufacturing semiconductor devices

A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are included in the same semiconductor layer.

Method for manufacturing a semiconductor device

A semiconductor device having memory cells. Each of the memory cells has a word gate formed over a semiconductor substrate with a first gate insulating layer interposed, an impurity layer, and first and second control gates in the shape of sidewalls. The first and second control gates adjacent to each other with the impurity layer interposed are connected to a common contact section. The common contact section includes a first contact conductive layer, a second contact conductive layer, and a pad-shaped third contact conductive layer. The third contact conductive layer is formed over the first and second contact conductive layers.

Non-volatile memory device

A fabrication method of a semiconductor device which has on the same semiconductor layer a transistor with a different high voltage gate as well as a high voltage drain and an MNOS memory transistor.

Method of manufacturing semi conductor device

A semiconductor device of the present invention has memory cells. Each of the memory cells includes a word gate formed over a semiconductor substrate with a first gate insulating layer interposed therebetween, an impurity layer, and first and second control gates in a shape of sidewalls. Each of the first and second control gates has a rectangular or square cross-sectional shape.

Semiconductor device and method of manufacturing the same

A semiconductor device of the present invention includes memory cells. Each of the memory cells includes a word gate formed over a semiconductor substrate with a second gate insulating layer interposed therebetween, an impurity layer, and first and second control gates in the shape of sidewalls. The first and second control gates adjacent to the impurity layer interposed therebetween is connected with a common contact section. The common contact section includes a contact conductive layer, a stopper insulating layer, and a cap insulating layer. The contact conductive layer is continuous with the first and second control gates. The cap insulating layer is formed at least over the stopper insulating layer.

Growing community of inventors

Fujimi-machi, Japan

Akihiko Ebina