Sony Corporation

Fuji Electric Co., Ltd.

Fuji Electric Corporate Research and Developement Ltd.

Fuji Electric Corporation Research and Development Ltd.

Akihiko Asano

Tomoatsu Kinoshita

Masumitsu Ino

Makoto Takatoku

Masahiro Fujino

Yukiyasu Sugano

Takenobu Urazono

Michio Mano

Yukimi Ichikawa

A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process.

Thin film semiconductor device, method of manufacturing the same and display

The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate () to a thin film device layer () provided on a protective layer () formed on a first substrate () through a first adhesive layer (), then, completely or partly removing the first substrate () in accordance with a process including at least one process of a chemical process and a mechanical polishing process, bonding a third substrate () to the exposed protective layer () or the protective layer () covered with the partly removed first substrate () through a second adhesive layer () and separating or removing the second substrate (). Thus, the thin film device suitable for a light and thin display panel is manufactured without deteriorating a ruggedness.

Method for manufacturing thin film device and semiconductor device

Method for manufacturing thin film device that includes a chemical etchant process

A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing the first substrate at least in a part thereof by etching with a chemical solution, bonding the protective layer, which covers the thin-film device layer on a side of the first substrate, to a third substrate via a second adhesive layer, and removing the second substrate. The protective layer is formed of at least two layers having resistance to the chemical solution used upon removal of the first substrate.

Process for the fabrication of thin-film device and thin-film device

Method for manufacturing thin film device and semiconductor device using a third substrate

A laser irradiation apparatus includes a laser light generation element, a splitting element for splitting laser light generated from the laser light generation element, a light interference element for causing a first beam and a second beam of the laser light split by the splitting element to interfere with each other to form a periodic light pattern, and a phase shifting element for electro-optically shifting the phase of the first beam. The laser light generation element is a pulse oscillation laser based on laser diode excitation.

Laser irradiation apparatus and method of treating semiconductor thin film

A polycrystalline thin film of good quality is obtained by improving a crystallization process of a semiconductor thin film using laser light. After conducting a film forming step of forming a non-single crystal semiconductor thin film on a surface of a substrate, an annealing step is conducted by irradiating with laser light to convert the non-single crystal semiconductor thin film to a polycrystalline material. The annealing step is conducted by changing and adjusting the cross sectional shape of the laser light to a prescribed region. The semiconductor thin film is irradiated once or more with a pulse of laser light having an emission time width from upstand to downfall of 50 ns or more and having a constant cross sectional area, so as to convert the semiconductor thin film contained in an irradiated region corresponding to the cross sectional area to a polycrystalline material at a time. At this time, the energy intensity of laser light from upstand to downfall is controlled to apply a desired change. According to the procedures, a polycrystalline material having a large particle diameter or a uniform particle diameter can be obtained. In some cases, upon irradiation with laser light, the substrate may be maintained in a non-oxidative atmosphere, or may be heated or cooled.

Process for producing thin film semiconductor device and laser irradiation apparatus

Solar cell made using a heterojunction formed from a crystalline silicon layer of a first conductivity type and a hydrogenated amorphous silicon film of a second conductivity type different from the first conductivity type. The hydrogenated amorphous silicon film includes oxygen.

Solar cell and a method for the manufacture thereof

After partially crystallizing an amorphous semiconductor deposited on a substrate, the irradition of infrared ray is conducted to grow a polycrystalline semiconductor layer on the crystallized region and the amorphous region by thermal decomposition while the temperature of the crystallized region is kept higher than that of the amorphous region. Since the polycystalline layer is formed of polycystalline grains grown from nuclei of the cystallized region, the crystal grain thereof is large.

Method of producing polycrystalline semiconductor thin film

A method of producing a p-type hydrogenated amorphous silicon carbide thin film comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon or a fluocarbon, and a boron compound, diluting the raw material gas mixture with hydrogen gas, and decomposing the raw material gas mixture by glow discharge to achieve a resultant film having a prescribed value of photoconductivity with a reduced optical absorption coefficient.

Method of producing p-type amorphous silicon carbide and solar cell

A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.

Growing community of inventors

Kanagawa, Japan

Akihiko Asano