Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Akiharu Miyanaga

Shunpei Yamazaki

Hisashi Ohtani

Kengo Akimoto

Masahiro Takahashi

Jun Koyama

Hideyuki Kishida

Takeshi Fukunaga

Junichiro Sakata

Hongyong Zhang

Satoshi Teramoto

Yasuhiko Takemura

Masayuki Sakakura

Takuya Hirohashi

Toru Takayama

Toru Mitsuki

Toshiji Hamatani

Yusuke Nonaka

Masashi Tsubuku

Hidekazu Miyairi

Tatsuya Honda

Kojiro Shiraishi

Hideki Uochi

Yasuo Nakamura

Takatsugu Omata

Junpei Sugao

Yasushi Ogata

Hiroki Ohara

Takayuki Inoue

Ryosuke Watanabe

Junichi Takeyama

Junichi Koezuka

Naoaki Yamaguchi

Tohru Inoue

Tetsunori Maruyama

Yuki Imoto

Nobuo Kubo

Hiromichi Godo

Hiroki Adachi

Norihiko Seo

Yasuharu Hosaka

Teppei Oguni

Motoki Nakashima

Tatsuji Nishijima

Toshimitsu Obonai

Suzunosuke Hiraishi

Shunsuke Adachi

Erumu Kikuchi

Kyouichi Mukao

Koji Dairiki

Takashi Shimazu

Yuji Iwaki

Shigenori Hayashi

Hideomi Koinuma

Shuhei Yoshitomi

Masaya Kadono

Atsunori Suzuki

Koki Inoue

Takamasa Kousai

Tadashi Shiraishi

Ko Inada

Masahiko Hayakawa

Shinji Maekawa

Hiroshi Shibata

Takeyoshi Watabe

Toshiyuki Isa

Hironobu Takahashi

Takeshi Shichi

Hiroshi Kanemura

Hisahi Ohtani

Masashi Hongoh

Jun Komaya

Shupei Yamazaki

Kiyoto Inomata

An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Semiconductor device and method for manufacturing the same

By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

Semiconductor device and manufacturing method thereof

An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nmand less than or equal to 0.7 nmin a region where a magnitude of a scattering vector is greater than or equal to 3.3 nmand less than or equal to 4.1 nm. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nmand less than or equal to 1.4 nmin a region where a magnitude of a scattering vector is greater than or equal to 5.5 nmand less than or equal to 7.1 nm.

Oxide semiconductor film and semiconductor device

An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.

Method for manufacturing semiconductor device

An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as HO), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

Semiconductor device having a first region comprising silicon, oxygen and at least one metal element formed between an oxide semiconductor layer and an insulating layer

It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In&#x2014;Ga&#x2014;Zn&#x2014;O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In&#x2014;Ga&#x2014;Zn&#x2014;O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO(ZnO)(m=1) are included in an amorphous structure represented by InGaO(ZnO)(m&#x3e;0).

In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1&#xd7;10spins/cm, preferably higher than or equal to 1&#xd7;10spins/cmand lower than 1&#xd7;10spins/cm.

Semiconductor device

It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

Semiconductor device including oxide semiconductor layer

Growing community of inventors

Kanagawa, Japan

Akiharu Miyanaga