Ngk Spark Plug Company, Limited

Akifumi Tosa

Motohiko Sato

Manabu Sato

Jun Otsuka

Kazuhiro Hayashi

Motonobu Kurahashi

Hiroshi Yamamoto

Shinji Yuri

Takenori Sawamura

Kenji Murakami

Masaki Muramatsu

Toshitake Seki

Kazuhisa Itakura

Takashi Oba

Tomohide Yamada

Kazushige Ohbayashi

Hitoshi Yokoi

Kaname Miwa

Hisahito Kashima

Kazushige Obayashi

Yasuhiko Inui

Yosuke Shinozaki

Masahiko Matsumiya

Yasushi Hara

Tetsuya Maeda

Yasuhiro Tsujimura

Yoichi Ito

Masaki Tsuji

A multilayer heating body () includes a ceramic substrate (), an electrode (), heaters (), terminals (), and an electricity supply path (). Through vias which constitute the electricity supply path include at least one combination of through vias &#x3b1;, &#x3b2;, &#x3b3;, and &#x3b4; which meets the following conditions (1) and (2). Condition (1): when the ceramic substrate is viewed from the front surface (3) side toward the back surface (3) side, the through via &#x3b4; is located at a position where the through via &#x3b4; overlaps the through via &#x3b2;, or in the vicinity of the through via &#x3b2;. Condition (2): when the ceramic substrate is viewed from the front surface side toward the back surface side, the through via &#x3b3; is located at a position between the through via &#x3b1; and the through via &#x3b4;, or located at a position where the through via &#x3b3; overlaps the through via &#x3b1;, or in the vicinity of the through via &#x3b1;.

Multilayer heating body

An alumina sintered body contains alumina as a main component and titanium. The alumina sintered body further contains at least one element selected from the group consisting of lanthanum, neodymium, and cerium. Aluminum is contained in the alumina sintered body in an amount such that a ratio of aluminum oxide to total oxides in the alumina sintered body becomes 93.00 to 99.85% by weight where the total oxides are defined as a total amount of all oxides contained in the alumina sintered body. Titanium is contained in an amount such that a ratio of titanium oxide to the total oxides becomes 0.10 to 2.00% by weight. Lanthanum, neodymium, and cerium are contained in a combined amount such that a ratio of the combined amount to the total oxides becomes 0.05 to 5.00% by weight. Volume resistivity is 1&#xd7;10to 1&#xd7;10&#x3a9;&#xb7;cm at room temperature.

Alumina sintered body, member including the same, and semiconductor manufacturing apparatus

A silicon nitride-melilite composite sintered body in accordance with the invention includes silicon nitride and a melilite MeSiON, where Me denotes a metal element combining with silicon nitride to generate the melilite. The silicon nitride-melilite composite sintered body contains Si in a range of 41 to 83 mole percent in SiNequivalent and Me in a range of 13 to 50 mole percent in oxide equivalent. The silicon nitride-melilite composite sintered body has an average thermal expansion coefficient that is arbitrarily adjustable in a range of 2 to 6 ppm/K at temperatures of 23 to 150&#xb0; C. The silicon nitride-melilite composite sintered body has a high Young's modulus, a high mechanical strength, and excellent sintering performance. A device used for inspection of semiconductor in accordance with the invention utilizes such a silicon nitride-melilite composite sintered body.

Silicon nitride-melilite composite sintered body and device utilizing the same

A wiring board includes a substrate core and a ceramic chip to be embedded therein. The substrate core has a housing opening portion opening at a core main surface. The ceramic chip is accommodated in the housing opening portion so that the core main surface and a chip first main surface face the same way. The ceramic chip includes a plurality of second terminal electrodes comprised of a metallized layer and formed on the chip second main surface so as to protrude therefrom. A projecting portion, disposed on the second main surface side so as to surround a plurality of the second terminal electrodes, is formed on the chip second main surface so as to protrude therefrom.

Wiring board and ceramic chip to be embedded

A capacitor comprising: a plurality of laminated dielectric layers; a plurality of inner electrode layers each disposed between mutually adjacent ones of the dielectric layers; and dummy electrode layers respectively disposed between the dielectric layers, disposed on sides closer to outer peripheral sides of the dielectric layers than to the inner electrode layers and disposed apart from the inner electrode layers.

Method of manufacturing capacitor for incorporation in wiring board, capacitor for incorporation in wiring board, and wiring board

A multilayer electronic component including a multilayer ceramic capacitor is disclosed, which includes a laminate of dielectric layers and internal electrodes disposed on the dielectric layers; at least one via-conductor penetrating the dielectric layers and connecting to the internal electrodes; and at least one external terminal formed on an outer surface of the laminate and connecting to an end of the via-conductor, wherein the external terminal includes a lower bump formed on the outer surface of the laminate and an upper bump formed on the lower bump, and a diameter of the upper bump is smaller than that of the lower bump.

Multilayer electronic component and method for producing the same

A laminated ceramic capacitor () divided into a first laminate (), a second laminate (), a third laminate (), and a fourth laminate (). The first laminate () includes a ceramic layer () serving as a dielectric layer. The ceramic layer () is thicker than a ceramic layer () sandwiched between internal electrodes () in the second laminate () or the fourth laminate (), and thinner than 20 times the thickness of the ceramic layer (). The third laminate () includes dielectric layers, which serve as the ceramic layers (), and has a thickness of 5% of the total thickness of the second laminate () and the fourth laminate (). Accordingly, the third laminate () achieves the function of absorbing an electrode-induced thickness differential. Also, by means of regulating the thickness of the first laminate (), portions of via electrodes () that extend without being electrically connected to the internal electrodes () can be shortened.

Capacitor and method for manufacturing the same

A method for producing a ceramic substrate which employs a cofiring process using restraint sheets in which a second ceramic green sheetis laminated on a green ceramic substrateso as to cover surface conductorsof the green ceramic substrate, the second ceramic green sheetsubsequently being integrated with the green ceramic substrate. Restraint sheets, which are not sintered at a sintering temperature at which the green ceramic substrateis sintered, are laminated on corresponding opposite sides of the green ceramic substrateso as to restrain the green ceramic substratetogether with the second ceramic green sheet. The second ceramic green sheetand the green ceramic substrateare fired at a temperature at which the second ceramic green sheetand the green ceramic substrateare integrally sintered, whereas the restraint sheetsare not sintered, to thereby yield a ceramic substrate. The restraint sheetsand a ceramic covering layerwhich covers the surface conductorsare removed, to thereby expose the surface conductor layer. A plating layeris formed on the surface conductor layer

Method for producing ceramic substrate, and ceramic substrate

A laminated ceramic capacitordivided into a first laminatea second laminatea third laminateand a fourth laminateThe first laminateincludes a ceramic layerserving as a dielectric layer. The ceramic layeris thicker than a ceramic layersandwiched between internal electrodesin the second laminateor the fourth laminateand thinner than 20 times the thickness of the ceramic layerThe third laminateincludes dielectric layers, which serve as the ceramic layersand has a thickness of 5% of the total thickness of the second laminateand the fourth laminateAccordingly, the third laminateachieves the function of absorbing an electrode-induced thickness differential. Also, by means of regulating the thickness of the first laminateportions of via electrodesthat extend without being electrically connected to the internal electrodescan be shortened.

A dielectric ceramic material is represented by the following compositional formula, (100-a)[Ba{(ZnCoNb}O]-a[MTaO], where M represents at least one species selected from K, Na, and Li. In one method, the dielectric material is produced by mixing raw material powders such that proportions by mol of component metals simultaneously satisfy the relations, 0.5&#x2266;a&#x2266;25; 0.98&#x2266;u&#x2266;1.03; 0&#x2266;v&#x2266;1; 0.274&#x2266;w&#x2266;0.374; 0.646&#x2266;x&#x2266;0.696; 0.5&#x2266;y&#x2266;2.5; and 0.8&#x2266;z&#x2266;1.2. The method further includes subjecting the resultant mixture to primary pulverization; calcining the resultant powder at 1,100-1,300&#xb0; C., followed by wet secondary pulverization; drying the resultant paste; granulating; molding the resultant granules to thereby yield a compact; and firing the compact in air advantageously at 1,400-1,600&#xb0; C.

Dielectric ceramic material

A dielectric porcelain composition comprising Ba, Nd, Pr, Bi, Ti and at least one of Na and K and satisfying a condition that when the composition is expressed by composition formula: BaO&#x2014;aNdO&#x2014;bPrO&#x2014;cBiO&#x2014;dTiO&#x2014;eAO, wherein A is at least one of Na and K, and a, b, c, d and e represent a molar ratio, a, b, c, d and e are in respective ranges of 1.5&#x2266;a&#x2266;2.6, 0.02&#x2266;b&#x2266;1.00, 0.2&#x2266;c&#x2266;0.6, 4.5&#x2266;d&#x2266;5.5 and 0.02&#x2266;e&#x2266;0.30.

Dielectric porcelain composition

The present invention is directed to a dielectric ceramic composition exhibiting a high unloaded quality factor and a small variation thereof. The dielectric ceramic composition of the invention containing Ba, Zn, and Ta, contains 100 parts by weight of a predominant component represented by xBaO&mdash;yZnO&mdash;(&frac12;)zTa O (x, y, and z represent compositional proportions by mol and satisfy x&plus;y&plus;z&equals;1), wherein x, y, and z fall within a quadrilateral region formed by connecting points A (x&equals;0.503, y&equals;0.152, z&equals;0.345), B (x&equals;0.497, y&equals;0.158, z&equals;0.345), C (x&equals;0.503, y&equals;0.162, z&equals;0.335), and D (x&equals;0.497, y&equals;0.168, z&equals;0.335) (sides AB, BD, DC, and CA being included) as shown in FIG. ; 0.2-1.6 parts by weight K as reduced to K O; and 0.7-8 parts by weight Ta as reduced to Ta O , wherein the ratio by weight of K to Ta falls within the range of 0.185-0.4. The dielectric resonator of the present invention is formed of the dielectric ceramic composition.

Dielectric porcelain composition and dielectric resonator using the same

Dielectric materials are disclosed that are based on BaO--ZnO--Ta.sub.2 O.sub.5 represented by the formula Ba(Zn.sub.1/3 Ta.sub.2/3)O.sub.3. Ba has been partly replaced by K and either Zn or Ta has been replaced by at least one element selected from Mg, Zr, Ga, Ni, Nb, Sn. The dielectric materials have a relatively high permittivity, a small absolute value of the temperature coefficient of resonance frequency, and a high unloaded quality factor. A method for producing the dielectric materials is also disclosed which includes mixing given amounts of starting materials, such as, for example, BaCO.sub.3, ZnO, Ta.sub.2 O.sub.5, K.sub.2 CO.sub.3, MgCO.sub.3, SnO.sub.2 or ZrO.sub.2, compacting the mixture to produce a compact, sintering the compact in an oxidizing atmosphere such as, for example, air, at 1,400 and 1,600.degree. C., more preferably at 1,550 to 1,600.degree. C. for 2 hours, and then heating the sintered compact at a temperature lower than the sintering temperature by from 50 to 250.degree. C., e.g., by 100.degree. C., for at least 12 hours, preferably for 24 hours. A dielectric resonator comprising the dielectric material of the present invention is also disclosed.

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Komaki, Japan

Akifumi Tosa