Micron Technology Incorporated

Akie Shimamura

Kenichi Kusumoto

Yasutaka Iuchi

Apparatuses and methods for fabricating multilayer structures are described. An example method includes: forming a conductive base layer including silicon; forming a first conductive layer including first conductive material above the conductive base layer; forming a conductive barrier layer above the conductive layer; performing thermal loading to form a second conductive layer including silicide of the first conductive material between the conductive base layer and the conductive barrier layer; and forming a third conductive layer above the conductive barrier layer.

Apparatuses of controlling cross-layer reactions in semiconductor device

A method of forming a conductive line construction comprises forming a structure comprising polysilicon-comprising material. Elemental titanium is directly against the polysilicon of the polysilicon-comprising material. Silicon nitride is directly against the elemental titanium. Elemental tungsten is directly against the silicon nitride. The structure is annealed to form a conductive line construction comprising the polysilicon-comprising material, titanium silicide directly against the polysilicon-comprising material, elemental tungsten, TiSiNbetween the elemental tungsten and the titanium silicide, and one of (a) or (b), with (a) being the TiSiNis directly against the titanium silicide, and (b) being titanium nitride is between the TiSiNand the titanium silicide, with the TiSiNbeing directly against the titanium nitride and the titanium nitride being directly against the titanium silicide. Structure independent of method is disclosed.

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Hiroshima, Japan

Akie Shimamura