Kabushiki Kaisha Toshiba

Aki Sasaki

Minoru Amano

Yukie Nishikawa

Masayuki Sugiura

Takao Noda

Yasuo Ashizawa

Chiharu Nozaki

In an HEMT, a channel forming layer is arranged above a semi-insulating substrate via a buffer layer. A spacer layer is arranged on the channel forming layer and an electron supplying layer and a Schottky contact layer are sequentially arranged on the spacer layer. A diffusion preventing layer, for preventing a metal element of a gate electrode from diffusing into the channel forming layer, is arranged in the Schottky contact layer.

Growing community of inventors

Koshigaya, Japan

Aki Sasaki