Kyocera Corporation

Aki Kitabayashi

Shinichi Abe

Youji Furukubo

Masanori Okamoto

Norihiko Matsushima

Sentarou Yamamoto

Seiji Oguri

Ken Nishiura

Kazumasa Umesato

Hiromitsu Ogawa

Akio Yamamoto

Atsuo Hatate

Keizo Takeda

Manabu Kyuzo

Akira Imoto

An electronic element housing package includes a bottom substrate, a bank portion, and a conductor part, in which the bottom substrate and the bank portion are an integrated object made of ceramic, the bottom substrate includes a region surrounded by the bank portion as a mounting portion for mounting an electronic element, the conductor part includes a first conductor, a second conductor, and a third conductor, the first conductor is partially exposed on a mounting surface of the bottom substrate and embedded in the bottom substrate, at least a part of the third conductor is disposed on an upper surface of the bank portion and a part thereof is exposed, and the second conductor is present between the first conductor and the third conductor inside the bottom substrate and the bank portion and electrically connects the first conductor and the third conductor.

Electronic element housing package and electronic apparatus

Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Method for producing semiconductor layer, method for producing photoelectric conversion device, and semiconductor starting material

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Higashiomi, Japan

Aki Kitabayashi