Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Aki Dote

Tomohiro Takamatsu

Wensheng Wang

Junichi Watanabe

Kazuaki Takai

Ko Nakamura

Yoshimasa Horii

Masaki Kurasawa

Kenji Nomura

Naoyuki Sato

Hideki Kitada

Kazutoshi Izumi

Mitsushi Fujiki

Hirotaka Tamura

Seiki Sakuyama

Naoya Sashida

Nobuhiro Imaizumi

Hideyuki Noshiro

Katsuyoshi Matsuura

Takeshi Ishitsuka

Taiji Sakai

Yukinobu Hikosaka

Shoichi Miyahara

Jirou Miura

An information processing apparatus includes: a memory; and a processor coupled to the memory and configured to: hold values of a plurality of state variables included in an evaluation function representing energy, and outputs, every certain number of trials, the values of the plurality of state variables; compute, when a state transition occurs in response to changing of one of the values of the plurality of state variables, an energy change value for each state transition based on a weight value selected based on an update index value; and determine a first offset value based on a plurality of the energy change values such that at least one of the state transitions is allowed, outputs a plurality of first evaluation values obtained by adding the first offset value to the plurality of energy change values, and outputs, every certain number of trials, the first offset value.

Information processing apparatus and method for controlling sampling apparatus

A semiconductor device includes, a plurality of semiconductor dies formed using semiconductor substrates, plane orientations of which are the same, and the plurality of the semiconductor dies are stacked such that a crystal orientation of at least one layer is different from other layers.

Semiconductor device and method of manufacturing the same

An electronic device includes: a substrate that includes a first penetration hole; a first electrode that is located on a first surface of the substrate so as to cover the first penetration hole; and a first penetrating electrode that is located in the first penetration hole and is in contact with or away from the first electrode depending on temperature.

Electronic device and method of fabricating the same

An electronic device includes: a first circuit board; a second circuit board located above a first region of the first circuit board; a first semiconductor element located above a second region of the first circuit board, which is different from the first region, and above a third region of the second circuit board; a first connection interposed between the first semiconductor element and the second region so as to electrically interconnect the first semiconductor element and the first circuit board; and a second connection interposed between the first semiconductor element and the third region so as to electrically interconnect the first semiconductor element and the second circuit board.

Electronic device, method for manufacturing the electronic device, and electronic apparatus

A semiconductor device includes: a semiconductor substrate; a wiring layer provided on a front-surface side of the semiconductor substrate; a through-via that penetrates through the semiconductor substrate from a back-surface side of the semiconductor substrate and is coupled to a wire included in the wiring layer; and a stress relaxation part that protrudes toward a through-via side and is disposed on a section in the wire and coupled to the through-via, the stress relaxation part including at least one insulating portion containing an insulating material having a smaller thermal expansion coefficient than a material of the through-via.

Semiconductor device

An electronic component includes: a substrate; wiring provided on the substrate, and including an uneven section at an edge portion of the wiring in plain view; and an insulating film provided on the substrate and on the wiring. And a method of manufacturing an electronic component includes: forming, on a substrate, wiring including an uneven section at an edge portion of the wiring in plain view; and forming an insulating film on the substrate and on the wiring.

Electronic component, method of manufacturing electronic component, and electronic device

There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3&#xb0; or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5&#xb0; or less, and a capacitor upper electrode.

Manufacturing method of a semiconductor device

A semiconductor device has a ferroelectric capacitor having a ferroelectric film, an interlayer insulating film having a first layer formed on the ferroelectric capacitor, a plug and a wiring connecting to the ferroelectric capacitor, and a dummy plug in the vicinity of the ferroelectric capacitor.

Semiconductor device and manufacturing method of a semiconductor device

A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.

Semiconductor device having ferroelectric capacitor and its manufacture method

An interlayer insulating film covering a ferroelectric capacitor is formed, and through the interlayer insulating film, contact holes each reaching a capacitor electrode are formed. A wiring connected to the capacitor electrode through the contact hole is further formed above the interlayer insulating film. A planar shape of the contact hole is a regular octagon, a regular rectangle with four angles thereof being rounded, an octagon with a length of each neighboring side thereof being different to each other, a circle, and so forth.

Semiconductor device with specifically shaped contact holes

A first interlayer insulation film is formed, on which a SiOcap film is then formed, and degassing of moisture in the first interlayer insulation film and the SiOcap film is preformed by heat treatment. Then, an AlOfilm is formed on the SiOcap film. Subsequently, heat treatment is performed on the AlOin an oxidation atmosphere, thereby accelerating oxidation of its surface. Thereafter, on the AlOfilm, a platinum film, a PLZT film, and an IrOfilm are formed and patterned, thereby forming a ferroelectric capacitor including an upper electrode, a capacity insulation film, and a lower electrode.

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Aki Dote