First Solar, Inc.

The University of Toledo

Akhlesh Gupta

Rick C Powell

Markus Gloeckler

Anke Abken

Benyamin Buller

Roger T Green

Upali Jayamaha

Peter Meyers

Ricky Charles Powell

David J Eaglesham

Long Cheng

Gang Xiong

David K Hwang

Zhibo Zhao

Ming Lun Yu

Pratima V Addepalli

Rui Shao

Alvin D Compaan

Andrei Los

San Yu

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Photovoltaic devices including doped semiconductor films

A multilayered structure may include a doped buffer layer on a transparent conductive oxide layer.

Photovaltaic device conducting layer

A photovoltaic cell can include a dopant in contact with a semiconductor layer. The photovoltaic cell can include a transparent conductive layer and a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer including magnesium. In certain circumstances, a substrate can be a glass substrate. In other circumstances, a substrate can be a metal layer. The first semiconductor layer can include CdS. The first semiconductor layer can have a thickness of between about 200 or 3000 Angstroms. The first semiconductor layer can include 1-20% magnesium. A method of manufacturing a photovoltaic cell can include providing a transparent conductive layer and depositing a first semiconductor layer in contact with the transparent conductive layer, the first semiconductor layer treated with magnesium.

Photovoltaic devices including MG-doped semiconductor films

A method to improve operation of a CdTe-based photovoltaic device is disclosed, the method comprising the steps of depositing a semiconductor absorber layer adjacent to a substrate, depositing a semiconductor buffer layer adjacent to the semiconductor layer, and annealing at least one of the semiconductor absorber layer and the semiconductor buffer layer with one of a laser and a flash lamp.

Method of manufacturing a photovoltaic device

A method and apparatus are disclosed in which cadmium chloride is deposited on a cadmium telluride layer while simultaneously heat treating the cadmium telluride layer.

Method and apparatus providing single step vapor chloride treatment and photovoltaic modules

A photovoltaic device can include an intrinsic metal layer adjacent to a semiconductor absorber layer; and a doped metal contact layer adjacent to the intrinsic metal layer, where the doped metal contact layer includes a metal base material and a dopant.

Metal barrier-doped metal contact layer

A photovoltaic device can include a doped contact layer adjacent to a semiconductor absorber layer, where the doped contact layer includes a metal base material and a dopant.

Dopant-containing contact material

Photovoltaic devices including Mg-doped semiconductor films

A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.

Growing community of inventors

Sylvania, OH, United States of America

Akhlesh Gupta