Sony Corporation

Akhiro Nomoto

Kazumasa Nomoto

Toshio Fukuda

A method for manufacturing a semiconductor device is provided. The method includes the steps of: (1) coating a solution containing an organic semiconductor material on a water-repellent surface of a water-repellent stamp substrate; (2) drying the thus coated organic semiconductor material-containing solution on the water-repellent surface to crystallize the organic semiconductor material in contact with the water-repellent surface, thereby forming a semiconductor layer; (3) thermally treating the semiconductor layer formed on the stamp substrate; and (4) pressing the stamp substrate at a side, in which the thermally treated organic semiconductor layer is formed, against a surface of a substrate to be transferred so that the organic semiconductor layer is transferred to the surface of the substrate to be transferred.

Method for manufacturing semiconductor device

A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.

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Kanagawa, Japan

Akhiro Nomoto