Mitsubishi Heavy Industries Limited

Akemi Takano

Yoshiaki Takeuchi

Hiroshi Mashima

Satoshi Sakai

Kengo Yamaguchi

Keisuke Kawamura

Yasuyuki Kobayashi

Tatsufumi Aoi

Masayoshi Murata

Eishiro Sasakawa

Nobuki Yamashita

Tetsuro Shigemizu

Kohei Kawazoe

Kiichi Sugimoto

Tatsuyuki Nishimiya

Hirohisa Yoshida

Tatsuji Horioka

Yosuke Fujitomi

Kazuhiko Ogawa

Yoshikazu Nawata

Tsuyoshi Tomita

Youji Nakano

Syouji Morita

Hidenori Takeda

Masahiro Sakaki

Shigekazu Ueno

Koichi Asakusa

Hiroshi Sonobe

Kazumasa Uchihashi

Tsukasa Yamane

Hiromu Takatuka

Atsushi Kiya

Yasuhiro Yamauti

With an image processing device, a presence/absence of a product defect is judged based on detected-image data obtained by a radiographic device that detects radiation that has passed through a product, which is an inspection subject. With the image processing device, a position of a product feature in the detected-image data is identified based on a shape of the product feature indicated by feature data stored in a storage portion in advance, defect candidates are extracted with reference to the identified product feature in the detected-image data, and the presence/absence of a product defect is judged based on characteristic quantities of product defects indicated by a defect characteristic stored in the storage portion in advance and characteristic quantities of the defect candidates.

Defect judging device, radiography system, and defect judging method

An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

Vacuum processing apparatus and operating method for vacuum processing apparatus

An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer () that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element. The computer () has a haze ratio characteristic made by associating the haze ratio and the light intensity of the diffused transmitted light and obtains a haze ratio by using the haze ratio characteristic and the light intensity received by the light receiving element.

Thin-film inspection apparatus and inspection method

A thin-film inspection apparatus calculates a film thickness of a first transparent thin film and a second transparent thin film of an inspection-target substrate including the first and second transparent thin films and a transparent conductive film on a transparent glass substrate. The apparatus has a storage section storing at least two feature-value characteristics in which at least two feature values selected from feature values in a spectral reflectance spectrum; a light irradiation section irradiating the inspection-target substrate with white light through the transparent glass substrate; a light receiving section receiving light reflected from the inspection-target substrate; and an arithmetic section obtaining measurement values of the feature values stored in the storage section from the spectral reflectance spectrum based on the reflected light received by the light receiving section, and calculating the film thickness of each of the first transparent thin film and the second transparent thin film.

Thin-film inspection apparatus and method therefor

A process for producing a photovoltaic device, wherein when providing an n-type amorphous silicon layer on an i-type amorphous silicon layer, a desired crystallization ratio can be achieved without reducing the deposition rate. The production process comprises a p-layer formation step of depositing a p-type amorphous silicon layer, an i-layer formation step of depositing an i-type amorphous silicon layer on the p-type amorphous silicon layer, and an n-layer formation step of depositing an n-type amorphous silicon layer on the i-type amorphous silicon layer, wherein the n-layer formation step comprises a first n-layer formation step of depositing a first n-layer on the i-type amorphous silicon layer, and a second n-layer formation step of depositing a second n-layer on the first n-layer, and the deposition conditions for the first n-layer formation step are conditions that yield a higher crystallization ratio than the deposition conditions for the second n-layer formation step, for deposition onto the same base material substrate.

Process for producing photovoltaic device

An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance.

Resistivity testing method and device therefor

A method of manufacturing a solar cell panel, includes steps (a) to (e). The step (a) is a step of forming a solar cell module by laminating solar cell films on a transparency substrate. The step (b) is a step of performing an inspection of electric power generation on the solar cell module. The step (c) is a step of forming a solar cell panel by executing a panel formation on the solar cell module. The step (d) is a step of cleaning a light incidence surface of the solar cell panel. The step (e) is a step of performing an inspection of electric power generation on the solar cell panel. The step (d) is executed immediately before the step (e).

Method of manufacturing solar cell panel

A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

High-frequency power supply structure and plasma CVD device using the same

A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus

Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.

Plasma chemical vapor deposition apparatus

An amorphous silicon solar cell includes a substrate, a transparent electrode formed on this substrate, a power-generating film formed on this transparent electrode, and a back-side electrode formed on this power-generating film. The power-generating film is formed by sequentially stacking p-type/i-type/n-type hydrogenated amorphous silicon layers. The defect density of the i-type hydrogenated amorphous silicon layer is less than 10,defects/cc.

Amorphous silicon solar cell

Growing community of inventors

Nagasaki, Japan

Akemi Takano