Semiconductor Energy Laboratory Co., Ltd.

Akane Murakami

Minoru Miyazaki

Baochun Cui

Mutsuo Yamamoto

Satoshi Teramoto

Yasuhiko Takemura

Hongyong Zhang

Toshimitsu Konuma

Hideki Uochi

Akira Sugawara

Yukiko Uehara

Shunpei Yamazaki

Itaru Koyama

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 &#x212b;, e.g., between 100 and 750 &#x212b;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Electronic circuit including pixel electrode comprising conductive film

Electronic circuit

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 &#x212b;, e.g., between 100 and 750 &#x212b;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

In the production of thin film transistor (TFT), a gate insulating film is formed to cover an active layer, a titanium nitride film is formed on the gate insulating film, and an aluminum film used as the gate electrode is formed on the titanium nitride film. The resulted configuration prevents the etching of the aluminum film from the insulating film side even if the etchant of aluminum enters the recessed portion at the edge of the active layer during the patterning of the gate electrode. Also in the anodizing process, when an oxide film is formed on the surface of the aluminum film, the oxidation of aluminum from the gate insulating film side is prevented even when the electrolyte solution enters the recessed portion at the edge of the active layer.

Semiconductor device and method for producing the same

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 &angst;, e.g., between 100 and 750 &angst;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Thin film transistor having pixel electrode connected to a laminate structure

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 &angst;, e.g., between 100 and 750 &angst;. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Pixel thin film transistor and a driver circuit for driving the pixel thin film transistor

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layers is less than 1500 .ANG., e.g., between 100 and 750 .ANG.. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and more preferably, at 0.degree. C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.

Process for fabricating electronic circuits with anodically oxidized

According to a transparent conductive film forming method, after an ITO (Indium Tin Oxide) thin film is formed at room temperature by a sputtering method, an annealing treatment is conducted on the film under hydrogen atmosphere at a suitable temperature such as a temperature higher than 200.degree. C.

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Kanagawa, Japan

Akane Murakami