Globalfoundries Inc.

Globalfoundries U.S. Inc.

International Business Machines Corporation

Stmicroelectronics Gmbh

Khalifa University

Renesas Electronics Corporation

Other

Intel Corporation

University of California

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Globalfoundaries Inc.

Globalfoundires Inc.

Globalfounries Inc.

Ajey Poovannummoottil Jacob

Yusheng Bian

Murat Kerem Akarvardar

Jody Alan Fronheiser

Kangguo Cheng

Steven J Bentley

Ruilong Xie

Bruce Bennett Doris

Ali Khakifirooz

Steven M Shank

Deepak K Nayak

Srinivasa Banna

Akhilesh Ramlaut Jaiswal

Abu Thomas

Xiuyu Cai

Min-Hwa Chi

Witold P Maszara

Bo Peng

Suraj Kumar Patil

Amogh Agrawal

Sujith Chandran

Michael John Hargrove

Kerem Akarvardar

Nicolas J Loubet

Bipul C Paul

Bartlomiej Jan Pawlak

Yi Qi

Michal Rakowski

Toshiharu Nagumo

Kern Rim

Gerard M Schmid

Andreas Knorr

Richard Farrell

Abhijeet Paul

Pierre Morin

Prasanna Khare

Steven R Soss

Christopher Michael Prindle

Jaime Viegas

Jaiswal Akhilesh

Hui Zang

Ramachandra Divakaruni

Dmitri E Nikonov

Maud Vinet

Laurent Grenouillet

Theodore James Letavic

Nicholas V Licausi

Karen A Nummy

Kenneth John Giewont

Shurong Liang

Won Suk Lee

Chi On Chui

George I Bourianoff

Daniel T Pham

Bruce S Dunn

Leland Smith

Asif J Chowdhury

Sylvie M Mignot

Anatol Khilo

William Taylor

Danny Pak-Chum Shum

Daniel Membreno

Marcus V S Dahlem

Humaira Zafar

Marcus Dahlem

Tenko Yamashita

Chanro Park

John H Zhang

Min Gyu Sung

Su Chen Fan

Siva P Adusumilli

Kisik Choi

Guillaume Bouche

Xusheng Kevin Wu

Jiehui Shu

Muthumanickam Sankarapandian

Haigou Huang

Chia-Yu Chen

Andy C Wei

Rama Divakaruni

Andreas Daniel Stricker

William James Taylor, Jr

Roderick Alan Augur

Qi Zhang

David C Pritchard

Mark V Raymond

Sanjay K Jha

Jeremy Austin Wahl

Catherine B Labelle

Linus Jang

Xuan Anh Tran

Thomas F Houghton

Jason Cantone

Bala S Haran

Eswar Ramanathan

Suryanarayana Kalaga

Asli Sahin

Colleen Meagher

David Moreau

Solomon M Serunjogi

The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

Waveguide structures

A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

Fin-based photodetector structure

Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

Optical fiber coupler having hybrid tapered waveguide segments and metamaterial segments

The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

Sensing scheme for STT-MRAM using low-barrier nanomagnets

The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

Non-planar waveguide structures

One illustrative device disclosed herein includes a lower waveguide structure and an upper body structure positioned above at least a portion of the lower waveguide structure. In this example, the device also includes a grating structure positioned in the upper body structure, wherein the grating structure comprises a plurality of grating elements that comprise a tunable material whose index of refraction may be changed by application of energy to the tunable material.

Reconfigurable optical grating/coupler

The present disclosure relates to semiconductor structures and, more particularly, to optical neuro-mimetic devices and methods of manufacture. The structure includes: a plurality of photodetectors and electrical circuitry that converts photocurrent generated from the photodetectors into electrical current and then sums up the electrical current to mimic neural functionality.

Optical neuro-mimetic devices

The present disclosure generally relates to structures for use in optoelectronic/photonic applications and integrated circuit (IC) chips. The present disclosure also relates to semiconductor devices having a photodetector coupled with a waveguide, more particularly, a photodetector with a butt-end coupled waveguide. The present disclosure provides a structure having a substrate, a photodetector arranged above the substrate, the photodetector having a core body and a coupler that is adjacent to the core body, in which the core body is configured to absorb light received by the coupler, and the coupler including a plurality of grating structures having respective widths that vary as a function of position relative to the core body.

Photodetectors and semiconductor devices

Disclosed are embodiments of an integrated circuit structure (e.g., a processing chip), which includes an array of integrated pixel and memory cells configured for deep in-sensor, in-memory computing (e.g., of neural networks). Each cell incorporates a memory structure (e.g., DRAM structure or a ROM structure) with a storage node, which stores a first data value (e.g., a binary weight value), and a sensor connected to a sense node, which outputs a second data value (e.g., an analog input value). Each cell is selectively operable in a functional computing mode during which the voltage level on a bit line is adjusted as a function of both the first data value and the second data value. Each cell is further selectively operable in a storage node read mode. Furthermore, depending upon the type of memory structure (e.g., a DRAM structure), each cell is selectively operable in a storage node write mode.

Array of integrated pixel and memory cells for deep in-sensor, in-memory computing

Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

Electro-optic modulators with stacked layers

Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

Waveguide-confining layer with gain medium to emit subwavelength lasers, and method to form same

One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

Photonic component with distributed Bragg reflectors

Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

Photodetectors with adjacent anode-cathode pairs

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Watervliet, NY, United States of America

Ajey Poovannummoottil Jacob