Samsung Electronics Co., Ltd.

Ajeong Choi

Eun Kyung Lee

Jeong Il Park

Jiyoung Jung

Youngjun Yun

Joo Young Kim

Suk Gyu Hahm

Yong Uk Lee

Hyun Woo Koo

Wonjae Joo

Jaewon Jang

Jong Won Chung

Chul Baik

Ji Young Jung

Woo Young Yang

Eigo Miyazaki

Byong Gwon Song

Chui Baik

Jeong Ii Park

A light-emitting device includes: a reflective layer; a first electrode provided on the reflective layer; a second electrode facing the first electrode; a first emission layer provided between the first electrode and the second electrode; a second emission layer provided between the first emission layer and the second electrode, and a first partial transmission mirror provided between the first emission layer and the second emission layer so that a first or higher order resonance mode is formed between the reflective layer and the first partial transmission mirror, and a second or higher order resonance mode is formed between the reflective layer and the second electrode.

Light-emitting device with improved light emission efficiency and display apparatus including the same

A light-emitting device with light emission efficiency and a display apparatus are provided. The light-emitting device includes a first organic light emission material layer generating light of a first wavelength, a second organic light emission material layer generating light of a second wavelength different from the first wavelength, and a third organic light emission material layer generating light of a third wavelength different from the first and second wavelengths, the first organic light emission material layer may be located at a position comprising a first antinode having a resonance wavelength resonating in a micro cavity, and the second organic light emission material layer and the third organic light emission material layer may be located at a position comprising a second antinode having the resonance wavelength resonating in the micro cavity.

Light-emitting device and display apparatus including the same

A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.

Display panels and display devices

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1.

Composition, electronic device, and thin film transistor

A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor including a pair of auxiliary structures corresponding to source/drain and method of manufacturing the same

A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.

Thin film transistor, method of manufacturing the same, and electronic device including the same

Disclosed are a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The semiconductor layer overlaps the gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer. The semiconductor layer includes a first semiconductor layer including a first organic semiconductor material and a second semiconductor layer including a second organic semiconductor material. The second semiconductor layer is farther spaced apart from the gate electrode than the first semiconductor layer. A HOMO energy level of the second organic semiconductor material is different from a HOMO energy level of the first organic semiconductor material. A method of manufacturing the thin film transistor is disclosed.

Thin film transistor and method of manufacturing the same

A fused polycyclic heteroaromatic compound represented by Chemical Formula 1A or 1B that has a compact planar structure in which eight or more rings are fused together.

Fused polycyclic heteroaromatic compound, organic thin film including compound and electronic device including organic thin film

An insulating ink includes a nanoparticle bonded with a substituent having a polymerizable functional group, at least one of an organosilane compound and polyorganosiloxane, and a solvent.

Insulating ink and insulator and thin film transistor and electronic device

An organic compound is represented by Chemical Formula 1, and an organic thin film, a thin film transistor, and an electronic device includes the organic compound.

Organic compound and organic thin film and electronic device

A composition includes a compound including a structural unit represented by the above Chemical Formula 1, and a structural unit represented by the above Chemical Formula 2 on at least one terminal end.

Composition for surface-modifying insulator, method for surface-modifying insulator, insulator, and thin film transistor

A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1:  In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.

Thin film transistor, method of manufacturing same, and electronic device including thin same

A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and electronic device comprising the thin film transistor

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Suwon-si, South Korea

Ajeong Choi