Hitachi Chemical Company, Ltd.

Aizou Kaneda

Akira Kageyama

Takashi Masuko

Yasuo Miyadera

Masami Yusa

Shinji Takeda

Iwao Maekawa

Tooru Kikuchi

Mitsuo Yamasaki

Toshiaki Tanaka

Masaaki Yasuda

Hiroshi Nishizawa

Yoshii Morishita

Hidekazu Matsuura

Yoshihiro Nomura

Touichi Sakata

Akio Kotato

Makoto Saitou

Tadaji Satou

Yasuhiro Yano

Yuusuke Miyamae

Takashi Kousaka

Mituo Yamasaki

Akira Nagai

Itsuo Watanabe

Fumio Inoue

Kazunori Yamamoto

Tomohisa Ohta

Yoshiaki Tsubomatsu

Kazuyoshi Kojima

Osamu Watanabe

Toshio Yamazaki

Kenzo Takemura

Naoya Suzuki

Naoyuki Shiozawa

Tsutomu Kitakatsu

Takafumi Dohdoh

Hiroto Ohata

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 MPa or less at a temperature of 250&#xb0; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

Semiconductor device and process for fabrication thereof

There are disclosed a resin composition comprising (A) a heat-resistant resin soluble in a solvent at room temperature, (B) a heat-resistant resin which is insoluble in a solvent at room temperature but becomes soluble by heating, and (C) a solvent; a heat-resistant resin paste further containing (D) particles or liquid state material D showing rubber elasticity; and a semiconductor device using the same and a method for producing the same.

Resin composition, heat-resistant resin paste and semiconductor device using these and method of preparing the same

Resin composition, heat-resistant resin paste and semiconductor device using them and method for manufacture thereof

Laminating method of film-shaped organic die-bonding material, die-bonding method, laminating machine and die-bonding apparatus, semiconductor device, and fabrication process of semiconductor device

A semiconductor chip is attached to a lead frame with a filmy organic die-bonding material having a water absorption of 1.5% by volume or less; having a saturation moisture absorption of 1.0% by volume or less, having a residual volatile component in an amount not more than 3.0% by weight, having a modulus of elasticity of 10 Mpa or less at a temperature of 259&deg; C. The semiconductor device thus obtained can be free from occurrence of reflow cracks during reflow soldering for the packaging of semiconductor devices.

In the present invention, provided are a semiconductor device having a semiconductor-element-mounting substrate on which a semiconductor element has been mounted via an adhesive having an exothermic-reaction curing start temperature of 130&deg; C. or below as measured with a differential scanning calorimeter at a heating rate of 10&deg; C./minute, and a process for its fabrication.

Semiconductor device and method for manufacturing the same

A paste composition which comprises as essential ingredients (A) a thermoplastic resin, (B) an epoxy resin, (C) a coupling agent, (D) a powdery inorganic filler, (E) a powder having rubber elasticity and (F) an organic solvent and which, when applied and dried, gives a coating film having a void content of 3% by volume or higher and a water vapor permeability as measured at 40&deg; C. and 90 %RH of 500 g/m &middot;24 h or less; a protective film which is formed by applying the paste composition to a surface of a semiconductor part and drying it and has a void content of 3% by volume or higher and a water vapor permeability as measured at 40&deg; C. and 90%RH of 500 g/m &middot;24 h or less; and a semiconductor device having the protective film.

Paste composition, and protective film and semiconductor device both obtained with the same

Method of production of semiconductor device

Laminating method of film-shaped organic die-bonding material,

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Yokohama, Japan

Aizou Kaneda