Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Aiping Wu

Yi-Chia Lee

Wen Dar Liu

Roberto John Rovito

Laisheng Sun

Madhukar Bhaskara Rao

Gautam Banerjee

Lili Wang

Tianniu Chen

Gene Everad Parris

Jhih Kuei Ge

Thomas Michael Wieder

Mark Leonard O'Neill

Scott Jeffrey Weigel

Raymond Nicholas Vrtis

John Anthony Marsella

John Giles Langan

Laura M Matz

Thomas Albert Braymer

Seiji Inaoka

Rajiv Krishan Agarwal

Mary Kathryn Haas

David Barry Rennie

Yuanmei Cao

Michael Phenis

Glenn Michael Mitchell

Yi Chia Lee

Thomas Mebrahtu

Mark Richard Brown

Edward Chia Kai Tseng

Machukar Bhaskara Rao

Eugene C Baryschpolec

Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.

Photoresist remover

A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.

Composition comprising three alkanolamines and a hydroxylamine for removing etch residues

The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

A microelectronic device (semiconductor substrate) cleaning composition is provided that comprises water; oxalic acid, and two or more corrosion inhibitors and methods of using the same.

Post etch residue cleaning compositions and methods of using the same

A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.

Etching compositions and methods for using same

A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation

A composition and method for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes water, a water-miscible organic solvent, an amine compound, an organic acid, and a fluoride ion source. The compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

Cleaning formulations

The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water.

Water-rich stripping and cleaning formulation and method for using same

A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa&#x3c;9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.

Cleaning formulations and method of using the cleaning formulations

A composition and method for removing residues such as, without limitation, post etched and/or post ashed photoresist, plasma etching, ashing, and mixtures thereof from a substrate is described herein. In one aspect, there is provided a method for removing residues from a substrate comprising: contacting the substrate with a composition comprising: water; a quaternary ammonium hydroxide compound; a fluoride containing compound; and optionally a corrosion inhibitor wherein the composition is free of an added organic solvent and wherein the composition has a pH greater than 9.

Aqueous cleaning composition for removing residues and method using same

The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; A method of using the formulation is also described.

Wet clean compositions for CoWP and porous dielectrics

The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65&#xb0; C. and in contact times under three minutes, allowing high throughput on single wafer tools.

Composition and method for photoresist removal

A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant.

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Macungie, PA, United States of America

Aiping Wu