Tokyo Electron Limited

Imec

Ainhoa Negreira

Kathleen Nafus

Mark H Somervell

Ian J Brown

Ihsan Simms

Philippe Vereecken

Dina Triyoso

Koichi Matsunaga

Daire J Cott

Yuhei Kuwahara

Rufi Kurstjens

Yumiko Kawana

A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.

Self-assembled monolayers as sacrificial capping layers

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly

A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 nm.

This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.

System and methods for spin-on coating of self-assembled monolayers or periodic organosilicates on a substrate

Photoelectrochemical cells and methods are provided, in particular, to the functionalization of semiconductor surfaces such that its semiconducting and light generating properties are maintained and the surface becomes stable in wet environments. In particular the preferred embodiments relate to unstable semiconductor materials which have photocurrent generating properties, and to methods for the functionalization of surfaces with metallic carbon nanotubes (CNTs).

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Leuven, Belgium

Ainhoa Negreira