Globalfoundries Inc.

International Business Machines Corporation

Sandisk Technologies Inc.

Contour Semiconductor, Inc.

Ailian Zhao

Hsueh-Chung Chen

Yunpeng Yin

Yongan Xu

Xunyuan Zhang

Errol Todd Ryan

Nicholas V Licausi

Sean Xuan Lin

Mac D Apodaca

Ming He

Christian Witt

Kunaljeet Tanwar

Moosung M Chae

Chun-chen Yeh

Toshiki Hirano

Guy Charles Wicker

Chiahsun Tseng

Lidu Huang

Federico Nardi

Larry Zhao

Thomas Brown

Jenn C Chow

Lisa Ceder

Systems and methods for providing a phase change memory that includes a phase change material, such as a chalcogenide material, in series with a heating element that comprises multiple thermal interfaces are described. The multiple thermal interfaces may cause the heating element to have a reduced bulk thermal conductivity or a lower heat transfer rate across the heating element without a corresponding reduction in electrical conductivity. The phase change material may comprise a germanium-antimony-tellurium compound or a chalcogenide glass. The heating element may include a plurality of conducting layers with different thermal conductivities. In some cases, the heating element may include two or more conducting layers in which the conducting layers comprise the same electrically conductive material or compound but are deposited or formed using different temperatures, carrier gas pressures, flow rates, and/or film thicknesses to create thermal interfaces between the two or more conducting layers.

Phase change memory electrode with multiple thermal interfaces

A wafer chip and a method of designing the chip is disclosed. A first fuse is formed having a first critical dimension and a second fuse having a second critical dimension are formed in a layer of the chip. A voltage may be applied to burn out at least one of the first fuse and the second fuse. The first critical dimension of the first fuse may result from applying a first mask to the layer and applying light having a first property to the mask. The second critical dimension of the second fuse may result from applying a second mask to the layer and applying light having a second property to the mask.

Making an efuse

A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.

Double self aligned via patterning

Double self-aligned via patterning

A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer in the ultra-low k film. In another aspect, a semiconductor device comprising a modified layer on a surface of an ultra-low k film is provided.

Methods for integration of pore stuffing material

A process is provided for methods of reducing contamination of the self-forming barrier of an ultra-low k layer during semiconductor fabrication. In one aspect, a method includes: providing a cured ultra-low k film which contains at least one trench, and the pores of the film are filled with a pore-stuffing material; removing exposed pore-stuffing material at the surface of the trench to form exposed pores; and forming a self-forming barrier layer on the surface of the trench.

Methods of self-forming barrier integration with pore stuffed ULK material

A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.

Method for forming self-aligned phase-change semiconductor diode memory

Growing community of inventors

Slingerlands, NY, United States of America

Ailian Zhao