Kirin Beer Kabushiki Kaisha

Aiko Sato

Masaki Nakaya

Mari Shimizu

Hiroyasu Tabuchi

Eitaro Matsui

Midori Takiguchi

A gas barrier plastic molded product having high gas barrier properties is provided. The gas barrier plastic molded product is a gas barrier plastic molded product comprising a plastic molded product and a gas barrier thin film provided on the surface of the plastic molded product, in which the gas barrier thin film contains silicon (Si), carbon (C), oxygen (O) and hydrogen (H) as constituent elements, and comprises a Si-containing layer having a Si content percentage represented by (Mathematical Formula 1) of 40.1% or more:Si content percentage [%]={(Si content [atomic %])/ (total content of Si, O and C [atomic %])}&#xd7;100&#x2003;&#x2003;(Mathematical Formula 1)wherein in Mathematical Formula 1, the content of Si, O or C is a content thereof in the items of the three elements of Si, O and C.

Gas-barrier plastic molded product and manufacturing process therefor

Provided is a method for producing a gas barrier plastic molded body by forming a gas barrier thin film which is substantially colorless and has gas barrier properties, on the surface of a plastic molded body by a heating element CVD method using only raw material gases that are highly safe. The method for producing a gas barrier plastic molded body according to the present invention is a method for producing a gas barrier plastic molded body () by forming a gas barrier thin film () on the surface of a plastic molded body (), the method comprising: a film-forming process in which the gas barrier thin film () is formed on the surface of the plastic molded body by a heating element CVD method, using an organosilane-based compound represented by formula (Chemical Formula 1) as a main raw material gas, using an oxidizing gas as an additive gas, and using a heating element containing tantalum (Ta) as a main constituent element:HSi&#x2014;Cn&#x2014;X&#x2003;&#x2003;(Chemical Formula 1)wherein in Chemical Formula 1, n represents 2 or 3; and X represents SiH, H, or NH.

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Chuo-ku, Japan

Aiko Sato