Nippon Telegraph and Telephone Corporation

Aiichirou Sasaki

Mitsuru Shinagawa

Tadashi Minotani

Nobutarou Shibata

Kazuo Fujiura

Seiji Toyoda

Hakaru Kyuragi

Masahiro Sasaura

Katsuyuki Ochiai

When a human hand () holds a transceiver (), the hand holds a bottom of an external wall surface and a side of the external wall surface of an insulating case (). Therefore, a transmitting and receiving electrode () and an insulating film () cover not only the bottom of the external wall surface but also the side of the external wall surface of the insulating case (). A first ground electrode (), a second ground electrode (), and a third ground electrode () are attached to upper portions of the internal wall surface of the insulating case () apart from the transmitting and receiving electrode (). An insulating foam member () is interposed between the insulating case () and a transceiver main body (), and an insulating foam member () is interposed between the transceiver main body () and a battery ().

Electric field sensor device, transceiver, positional information obtaining system and information input system

The present invention relates to an electric field sensor including: a light source (); an electro optic crystal () which is applied with an electric field based on a signal under test, in which a birefringent index changes according to the electric field, and which changes a polarization state of light incident from the light source according to the birefringent index and emits the light; and a detector () that detects an electric signal according to the change of the polarization state of the light emitted from the electro optic crystal (). Further, the electric field sensor includes: a signal electrode () for applying the electric field based on the signal under test to the electro optic crystal (); a counter electrode () that forms a pair with the signal electrode (); and an auxiliary electrode () that is electrically connected to the counter electrode (), and that forms a capacitance with ground.

Electric field sensor

On one pair of opposed side faces () of electro-optic crystal (), grooves () are formed so as to make bottom faces of the grooves approach each other and make a distance between the bottom faces shorter than a predetermined distance, and the pair of electrodes () are formed in the grooves () so as to fill the grooves nearly completely.

Electrooptic modulation element

Growing community of inventors

Tokyo, Japan

Aiichirou Sasaki