Mitsubishi Denki Kabushiki Kaisha

Aiichiro Nara

Hisao Kondo

Takeji Fujiwara

Hideaki Ikegawa

Masatoshi Mizushima

Fumi Moriai

Semiconductor substrates electroplated with nickel-palladium alloy consisting of above 50 to 80 atomic percent nickel and below 50 to 20 atomic percent palladium exhibit excellent thermal stability.

Process for forming electrode on semiconductor device

A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.

Nickel-palladium Schottky junction in a cavity

A nickel-palladium alloy in the form of a layer is contacted by one portion of one main face of a semiconductor substrate to form a Schottky barrier. A gold layer is disposed upon the nickel-palladium layer and an electrically insulating film is disposed on the remaining portion of the one main substrate face to contact and surround both layers. The film has a thickness equal to or greater than the sum of thicknesses of both layers.

Growing community of inventors

Amagasaki, Japan

Aiichiro Nara