The 13Th Research Institute of China Electronics Technology Group Corporation

The 13Th Research Institute of China Electronics

Aihua Wu

Yibang Wang

Faguo Liang

Chen Liu

Ye Huo

Jing Sun

Peng Luan

Yanli Li

Jian Cao

Wei Wang

Xingchang Fu

Xuefeng Zou

Chong Li

Xiuwei Tian

Yanan Liu

Zhifu Hu

Yan Liu

Yuwei Zhai

Hao Li

Chen Ding

Xiaodong Jing

Baicheng Sheng

A three-dimensional displacement compensation method is provided. The method includes an obtaining step, a transforming step, a first determining step, a first calculating step and a compensating step. The obtaining step includes obtaining a current image of a measured element captured by a microscopic thermoreflectance thermography device. The transforming step includes two sub-steps. One sub-step uses Fourier transform to calculate a reference image to obtain a first result, and the other sub-step uses Fourier transform to calculate the current image to obtain a second result. The first determining step includes determining a peak point coordinate and a fitting diameter of a point spread function of an optical system of the device. The first calculating step includes calculating a three-dimensional displacement of the position to be compensated relative to the reference position. The compensating step compensates the position to be compensated.

Three-dimensional displacement compensation method for microscopic thermoreflectance thermography and control device

A method includes: constructing an on-wafer calibration piece model set that includes one or more on-wafer calibration piece models, where each of the one or more on-wafer calibration piece models has a corresponding on-wafer calibration piece; selecting an on-wafer calibration piece model from the on-wafer calibration piece model set; measuring the on-wafer calibration piece utilizing an on-wafer S parameter measurement system that is calibrated using a multi-thread TRL calibration method in a Terahertz frequency band, to obtain an S parameter of the on-wafer calibration piece; and calculating a plurality of different parameters that represent crosstalk of calibration pieces in the on-wafer calibration piece model, according to an admittance calculated according to the S parameter and an admittance formula corresponding to the on-wafer calibration piece model.

Method for determining parameters in on-wafer calibration piece model

The present application provides two-port on-wafer calibration piece circuit models and a method for determining parameters. The method includes: measuring a single-port on-wafer calibration piece circuit model corresponding to a first frequency band to obtain a first S parameter; calculating, according to the first S parameter, an intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model; measuring the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band to obtain a second S parameter; and calculating a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model according to the second S parameter and the intrinsic capacitance value.

Two-port on-wafer calibration piece circuit model and method for determining parameters

A calibration method includes: acquiring eight error models obtained after a preliminary calibration of a Terahertz frequency band system; based on the eight error models, determining a first mathematical model according to a first S parameter related to a first calibration piece, the first mathematical model comprising parallel crosstalk terms between probes, and determining a second mathematical model according to a second S parameter related to a second calibration piece, the second mathematical model comprising series crosstalk terms between the probes; determining a third mathematical model according to a third S parameter related to a measured piece; and solving and obtaining a Z parameter of the measured piece based on the first mathematical model, the second mathematical model and the third mathematical model, and acquiring an S parameter of the measured piece according to the Z parameter of the measured piece.

Calibration method and terminal equipment of terahertz frequency band on-wafer S parameter

The present application is applicable to the technical field of terahertz on-wafer measurement, and provides a new on-wafer S-parameter calibration method and device. The method includes: performing two-port calibration on a waveguide end face when a probe is not connected to a test system; performing one-port calibration on each of two probe end faces when the probe is connected to the test system; and fabricating a crosstalk calibration standard equal to a device under test in length on a substrate of the device under test, and correct a crosstalk error of the test system according to the crosstalk calibration standard. The present application can realize accurate characterization and correction of crosstalk error in a high-frequency on-wafer S-parameter calibration process, and improve the accuracy of error correction in high-frequency on-wafer S-parameter measurement.

On-wafer S-parameter calibration method

The disclosure provides a calibration method, a system and a device of an on-wafer S parameter of a vector network analyzer. The method comprises the steps of: acquiring a first parameter of a first crosstalk calibration piece measured by the vector network analyzer; obtaining a main crosstalk error term based on the first parameter of the first crosstalk calibration piece and a calibration parameter of the first crosstalk calibration piece; acquiring a second parameter of a second crosstalk calibration piece measured by the vector network analyzer based on the main crosstalk error term; and obtaining a secondary crosstalk error term based on the second parameter of the second crosstalk calibration piece and a calibration parameter of the second crosstalk calibration piece, wherein the main crosstalk error term and the secondary crosstalk error term are used for calibrating the vector network analyzer.

Calibration method, system and device of on-wafer s parameter of vector network analyzer

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Shijiazhuang, China

Aihua Wu