Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Aidi Zhang

Zhenqi Zhang

Wenhai Mei

Yichi Zhang

Haowei Wang

Xiaoyuan Zhang

Jinglu Bai

A light-emitting substrate includes a substrate, a pixel defining layer arranged on the substrate, a plurality of light-emitting devices and at least one blocking unit. The pixel defining layer has a plurality of openings, and each light-emitting device includes a quantum dot light-emitting pattern arranged in an opening. Each opening has at least one side wall, a side wall includes a first portion and a second portion, the first portion is a portion of the side wall that is in contact with a respective quantum dot light-emitting pattern, and the second portion is a portion of the side wall that is away from the substrate relative to the first portion. Each blocking unit includes at least one siloxane segment. Each blocking unit is located in an opening, and at least one siloxane segment in each blocking unit is grafted to a second portion of a corresponding side wall.

Light-emitting substrate and method for manufacturing the same, and light-emitting apparatus

A method for manufacturing an array substrate includes: forming a patterned film layer on a side of a substrate, wherein the patterned film layer is provided with a plurality of grooves; forming a first precursor structure in the groove, wherein a material of the first precursor structure includes a first precursor; and disposing, in an environment of a gaseous second precursor, the substrate on which the first precursor structure is formed, such that the gaseous second precursor is reacted with the first precursor structure to form a perovskite crystal structure; wherein one of the first precursor and the gaseous second precursor includes a metal halide, and the other of the first precursor and the gaseous second precursor includes one of a formamidine halide, a methyl-amine halide, a cesium halide, and a hydrogen sulfide.

Method for manufacturing array substrate, array substrate, display panel, and display device

A quantum dots light emitting diode is provided. The quantum dots light emitting diode includes a first electrode layer; an electron transport layer on the first electrode layer; and a quantum dots layer on a side of the electron transport layer away from the first electrode layer. The electron transport layer includes a gradient alloy composite sub-layer including an electron transport oxide material and an electron transport non-oxide chalcogen-containing material. The non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion. The electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.

Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode

Disclosed are a quantum dot light emitting device and a manufacturing method thereof as well as a display apparatus. The quantum dot light emitting device includes: a substrate; a pixel definition layer, wherein the pixel definition layer includes a plurality of pixel openings and pixel partition bodies, and a surface of each pixel partition body has a hydroxide radical; a quantum dot layer, located in the pixel openings; and a polymer structure sealing the quantum dot layer in the pixel openings, wherein the polymer structure is a of fully enclosed structure at least formed by polymerization of siloxane, thiol siloxane and the hydroxide radical, the siloxane, the hydroxide radical and the thiol siloxane are all polymerized, and a sulfur atom of a thiol in the thiol siloxane is combined with a coordinating atom of the quantum dot layer.

Quantum dot light emitting device and manufacturing method thereof as well as display apparatus

Provided are a display panel and a manufacturing method therefor, and a display apparatus. The display panel includes a plurality of sub-pixels of at least two colors and further comprises: a base substrate; a first electrode on the base substrate; an electron transport layer at the side of the first electrode facing away from the base substrate; a quantum dot light-emitting layer at the side of the electron transport layer facing away from the base substrate; and a second electrode at the side of the quantum dot light-emitting layer facing away from the base substrate. Materials of the quantum dot light-emitting layer of the sub-pixels of different colors are different. The electron transport layer is of an alloy heterostructure at least composed of a metal oxide and a metal chalcogenide. Contents of the metal chalcogenide in the alloy heterostructure at positions of the sub-pixels of different colors are different.

Display panel and manufacturing method therefor, and display apparatus

The present disclosure provides a quantum dot light emitting device, a method for preparing the same, and a quantum dot display device. The quantum dot light emitting device includes a first electrode layer, a first functional layer, a light emitting layer, a second functional layer, and a second electrode layer, and the light emitting layer being located on a surface of the first functional layer away from the first electrode layer and including perovskite quantum dots and ligands bonded to the quantum dots. The ligands in the quantum dot light emitting device can form into a network to wrap the quantum dots, which is conducive to keeping the light emitting layer with a better morphology, and reducing damage to the quantum dot structure caused by the solvent in the adjacent functional layers, thereby improving the stability of the light emitting layer and the lifetime of the device.

Quantum dot light emitting device and method for preparing the same, and quantum dot display device

The present disclosure provides a quantum dot light emitting panel, a display device, and a manufacturing method. The quantum dot light emitting panel comprises: a base substrate; a cathode layer, located on a side of the base substrate; an electron transfer layer, located on a side of the cathode layer located away from the base substrate; a quantum dot light emitting layer, located on a side of the electron transfer layer located away from the cathode layer, and having at least two light emitting portions having mutually different wavelength ranges of emitted light; a photosensitive polymer film layer, located between the quantum dot light emitting layer and the electron transfer layer, having photosensitive portions in a one-to-one correspondence with the light emitting portions, and configured such that molecular chains break when the photosensitive polymer film layer is subjected to preconfigured light irradiation; and an anode layer, located on a side of the quantum dot light emitting layer located away from the photosensitive polymer film layer.

Quantum dot light emitting panel, display device, and manufacturing method

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a cathode and an electron transport layer arranged on one side of the cathode, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

Quantum dot light-emitting device, manufacturing method and display device

Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Preparation methods of quantum dot light emitting device and quantum dot display panel using stacked sacrificial layer and photoresist layer

The embodiments of the present disclosure provides a quantum dot light emitting device, a light emitting layer and a manufacturing method thereof, and a display device. The device includes a perovskite quantum dot layer containing a second halogen element; a siloxane polymer film layer which is provided on a side of the perovskite quantum dot layer containing the second halogen element. The perovskite quantum dot layer containing the second halogen element and the siloxane polymer film layer are connected by a chemical bond.

Quantum dot light emitting device, light emitting layer and manufacturing method thereof, and display device

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Ligand, ligand quantum dot, quantum dot layer and method for patterning the same

A quantum dot light-emitting device, a manufacturing method and a display device are provided. The quantum dot light-emitting device includes a substrate and a cathode arranged on the substrate; an electron transport layer arranged on one side of the cathode, away from the substrate, wherein the electron transport layer comprises a plurality of pixel regions; an adhesive layer arranged on one side of the electron transport layer, away from the cathode; a quantum dot film layer arranged on one side of the adhesive layer, away from the electron transport layer, wherein both the quantum dot film layer and the adhesive layer are located in the pixel regions; wherein the adhesive layer is respectively connected to the electron transport layer and the quantum dot film layer through at least one of chemical bonding and physical entanglement.

The present disclosure relates to a core-shell type quantum dot, comprising a quantum dot core, a light-transmitting inorganic mesoporous material layer on a surface of the quantum dot core, and a filler different from the inorganic mesoporous material in mesopores of the light-transmitting inorganic mesoporous material layer. The present disclosure also relates to the preparation and use of the core-shell type quantum dot core. The quantum dot core is coated with the light-transmitting inorganic mesoporous material and the mesopores of the inorganic mesoporous material are filled with the filler different from the inorganic mesoporous material, and the core-shell type quantum dots thus obtained not only have improved optical stability and chemical stability, but also have adjustable optical properties.

Core-shell type quantum dot, preparation method and use thereof

The present disclosure provides a quantum dot light emitting diode, a manufacturing method thereof and a display device, and belongs to the field of display technologies. The quantum dot light emitting diode of the present disclosure includes an anode layer, a cathode layer, a quantum dot layer disposed between the anode layer and the cathode layer, an electron transport layer disposed between the quantum dot layer and the cathode layer, and an electron blocking layer disposed between the electron transport layer and the quantum dot layer; and metal-sulfur bonds are formed in an interface between the electron blocking layer and the quantum dot layer, and contain metal elements from the quantum dot layer and sulfur elements from the electron blocking layer.

Quantum dot light emitting diode, manufacturing method thereof, and display device

A display substrate, comprising a plurality of light emitting units of different colors, each of which comprises: an electron transport layer, a hole transport layer, a quantum-dot light emitting layer located between the electron transport layer and the hole transport layer; and a hydrophilicity and hydrophobicity variable layer, located between the electron transport layer and the quantum-dot light emitting layer and configured to undergo an exposure treatment to change hydrophilicity and hydrophobicity of sides of the hydrophilicity and hydrophobicity variable layer that are in contact with the electron transport layer and the quantum-dot light emitting layer.

Growing community of inventors

Beijing, China

Aidi Zhang