Micron Technology Incorporated

Other

Aibin Yu

Wei Zhou

Zhaohui Ma

Bret K Street

Soo Loo Ang

Chee Chung So

Shijian Luo

Jonathan S Hacker

Sony Varghese

Yee Chon Chin

A semiconductor device assembly is provided. The semiconductor device assembly includes a package substrate and a silicon spacer disposed on an upper surface of the substrate, the silicon spacer having a plurality of trenches extending into the silicon spacer from a top surface thereof. The semiconductor device assembly further includes one or more semiconductor devices disposed over the silicon spacer. Moreover, the semiconductor device assembly includes an encapsulant material at least partially encapsulating the one or more semiconductor devices and the package substrate, the encapsulant material at least partially filling the plurality of trenches of the silicon spacer.

Silicon spacers with improved adhesion and semiconductor device assemblies incorporating the same

A bond pad with micro-protrusions for direct metallic bonding. In one embodiment, a semiconductor device comprises a semiconductor substrate, a through-silicon via (TSV) extending through the semiconductor substrate, and a copper pad electrically connected to the TSV and having a coupling side. The semiconductor device further includes a copper element that projects away from the coupling side of the copper pad. In another embodiment, a bonded semiconductor assembly comprises a first semiconductor substrate with a first TSV and a first copper pad electrically coupled to the first TSV, wherein the first copper pad has a first coupling side. The bonded semiconductor assembly further comprises a second semiconductor substrate, opposite to the first semiconductor substrate, the second semiconductor substrate comprising a second copper pad having a second coupling side. A plurality of copper connecting elements extend between the first and second coupling sides of the first and second copper pads.

Bond pad with micro-protrusions for direct metallic bonding

Methods of making semiconductor device packages may involve cutting kerfs in streets between regions of a semiconductor wafer and positioning stacks of semiconductor dice on portions of surfaces of at least some adjacent regions. A protective material may be dispensed only between the stacks of the semiconductor dice, over the exposed remainders of the regions, and in the kerfs. A back side of the semiconductor wafer may be ground to a final thickness, revealing the protective material in the kerfs at a side of the semiconductor wafer opposite the stacks of the semiconductor dice. The protective material between the stacks of the semiconductor dice and within the kerfs may be cut through, leaving the protective material on sides of the semiconductor dice of the stacks and on side surfaces of the regions within the kerfs.

Methods of making semiconductor devices

Methods for forming semiconductor die assemblies with heat transfer features are disclosed herein. In some embodiments, the methods comprise providing a wafer having a first side and a second side opposite the first side, attaching a semiconductor die stack to the first side of the wafer, and forming a plurality of heat transfer features at the second side of the wafer. The heat transfer features can be defined by a plurality of grooves that define an exposed continuous surface of the wafer at the second side compared to a planar surface of the wafer.

Semiconductor die assemblies with heat sink and associated systems and methods

Methods of protecting semiconductor devices may involve cutting partially through a thickness of a semiconductor wafer to form trenches between stacks of semiconductor dice on regions of integrated circuitry of the semiconductor wafer. A protective material may be dispensed into the trenches and to a level at least substantially the same as a height of the stacks of semiconductor dice. Material of the semiconductor wafer may be removed from a back side thereof at least to a depth sufficient to expose the protective material in the trenches. A remaining thickness of the protective material between the stacks of semiconductor dice may be cut through.

Semiconductor devices comprising protected side surfaces and related methods

Semiconductor die assemblies with heat sinks are disclosed herein. In one embodiment, a semiconductor die assembly includes a stack of semiconductor dies and a mold material surrounding at least a portion of the stack of semiconductor dies. A heat sink is disposed on the stack of semiconductor dies and adjacent the mold material. The heat sink includes an exposed surface and a plurality of heat transfer features along the exposed surface that are configured to increase an exposed surface area compared to a planar surface.

Methods of making semiconductor device packages may involve attaching a first semiconductor die to a carrier wafer, an inactive surface of the first semiconductor die facing the carrier wafer. One or more additional semiconductor die may be stacked on the first semiconductor die on a side of the first semiconductor die opposite the carrier wafer to form a stack of semiconductor dice. A protective material may be positioned over the stack of semiconductor dice, a portion of the protective material extending along side surfaces of the first semiconductor die to a location proximate the inactive surface of the first semiconductor die. The carrier wafer may be detached from the first semiconductor die.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Wafer-level methods of processing semiconductor devices may involve forming grooves partially through a molding material, the molding material located in streets and at least surrounding stacks of semiconductor dice located on a wafer. Wafer-level methods of preparing semiconductor devices may involve attaching a wafer to a carrier substrate and forming stacks of laterally spaced semiconductor dice on die locations of the wafer. Molding material may be disposed over the die stacks on a surface of the wafer to at least surround the stacks of semiconductor dice with the molding material. Grooves may be formed in the molding material by partially cutting through the molding material between at least some of the stacks of semiconductor dice along streets between the die stacks. The resulting wafer-level assembly may then, when exposed to elevated temperatures during, for example, debonding the wafer from a carrier, exhibit reduced propensity for warping.

Methods of processing wafer-level assemblies to reduce warpage, and related assemblies

Methods of protecting semiconductor devices may involve forming trenches in streets between stacks of semiconductor dice on regions of a semiconductor wafer. A protective material may be positioned between the die stacks and in the trenches, after which the wafer is thinned from a side opposite the die stacks to expose the protective material in the trenches. Semiconductor devices comprising stacks of dice and corresponding base semiconductor dice comprising wafer regions are separated from one another by cutting through the protective material along the streets and in the trenches. The protective material covers at least sides of each die stack as well as side surfaces of the corresponding base semiconductor die.

Methods of processing semiconductor wafers may involve, for example, encapsulating an active surface and each side surface of a wafer of semiconductor material, a plurality of semiconductor devices located on the active surface of the wafer, an exposed side surface of an adhesive material located on a back side surface of the wafer, and at least a portion of a side surface of a carrier substrate secured to the wafer by the adhesive material in an encapsulation material. At least a portion of the side surface of the adhesive material may be exposed by removing at least a portion of the encapsulation material. The carrier substrate may be detached from the wafer. Processing systems and in-process semiconductor wafers are also disclosed.

Growing community of inventors

Singapore, Singapore

Aibin Yu