Samsung Electronics Co., Ltd.

Sungkyunkwan University

Ahrum Sohn

Hyeonjin Shin

Kyung-Eun Byun

Changhyun Kim

Jaehwan Jung

Sangwoo Kim

Sang-Woo Kim

Sang-woo Kim

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.

Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same

Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS) substrate.

Method of forming transition metal dichalcogenide thin film

Growing community of inventors

Pyeongtaek-si, South Korea

Ahrum Sohn