Samsung Electronics Co., Ltd.

Sk Corporation

Sk Energy Co., Ltd.

Sk Innovation Co., Ltd.

Sk Global Chemical Co., Ltd.

Korea Research Institute of Chemical Technology

Ahn Seop Choi

Sun Woong Choi

Reum Oh

Yong Ki Park

Seung Hoon Oh

Won Choon Choi

Hee Young Kim

Deuk Soo Park

Chul Wee Lee

Suk Joon Kim

Sin Cheol Kang

Sang Yun Han

Dong Hyun Cho

Jeong Ri Kim

Tae Jin Kim

Hee Soo Kim

Yong Seung Kim

Young Min Chung

In Kyu Song

Seong Jun Lee

Jong Hyung Lee

Ji Chul Jung

Byeung Soo Lim

Kyoung Hak Sung

Byoung Mu Chang

Sin Choel Kang

A wafer-level method of testing an integrated circuit (IC) device includes: (i) applying a plurality of test operation signals to a wafer containing the IC device, (ii) generating a test enable signal in response to detecting, on the wafer, a toggling of at least one of the plurality of test operation signals, and then (iii) testing at least a portion of the IC device in response to the generating the test enable signal. The generating may also include generating a test enable signal in response to detecting, on the wafer, an inactive-to-active transition of a toggle detection signal.

Wafer level methods of testing semiconductor devices using internally-generated test enable signals

A stacked memory device includes a buffer die, a plurality of memory dies stacked on the buffer die and a plurality of through silicon vias (TSVs). The buffer die communicates with an external device. The TSVs extend through the plurality of memory dies to connect to the buffer die. Each of memory dies includes a memory cell array which includes a plurality of dynamic memory cells coupled to a plurality of word-lines and a plurality of bit-lines. The buffer die includes a test circuit, and the test circuit, in a test mode, performs a test on the dynamic memory cells of a target memory die corresponding to one of the memory dies and store, an address of a memory cell row including at least one defective cell, in at least one column decoder of other memory dies of except the target memory die.

Stacked memory devices, memory systems and methods of operating stacked memory devices

This invention relates to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, and to a bismuth molybdate catalyst, a preparation method thereof, and a method of preparing 1,3-butadiene using the same, in which 1,3-butadiene can be prepared through oxidative dehydrogenation directly using a C4 mixture including n-butene and n-butane as a reactant in the presence of a mixed-phase bismuth molybdate catalyst including &#x3b1;-bismuth molybdate (Bi2Mo3On) and &#x3b3;-bismuth molybdate (Bi2MoO6). According to this invention, the C4 raffinate, containing many impurities, is used as a reactant, without an additional n-butane separation process, thus obtaining 1,3-butadiene at high yield. Unlike complicated multicomponent-based metal oxides, the catalyst of the invention has simple constituents and synthesis routes, and can be easily formed through physical mixing, and thus is very advantageous in assuring reproducibility and can be directly applied to commercial processes.

Bismuth molybdate-based catalysts, method of preparing thereof and method of preparing 1,3-butadiene using thereof

A porous solid acid catalyst for producing light olefins is prepared through pillaring and a solid state reaction of a raw material mixture. The catalyst is made of a porous material having a crystalline structure that is different from that of the raw material mixture. The catalyst exhibits excellent catalytic activity (i.e., conversion and selectivity) in the production of light olefins from hydrocarbon feeds such as full range naphthas.

Solid acid catalyst for producing light olefins and process using the same

A process for increasing the production of light olefin hydrocarbons from a hydrocarbon feedstock. A process for producing an aromatic hydrocarbon mixture and liquefied petroleum gas (LPG) from a hydrocarbon mixture, and a process for producing a hydrocarbon feedstock which is capable of being used as a feedstock in the former process, that is to say, a fluidized catalytic cracking (FCC) process, a catalytic reforming process, and/or a pyrolysis process, are integrated, thereby it is possible to increase the production of C-Clight olefin hydrocarbons.

Process for increasing production of light olefin hydrocarbon from hydrocarbon feedstock

A method of on-line coating a coat film on the inner wall of a reaction tube in a hydrocarbon pyrolysis reactor for preventing the formation and the deposit of coke on the inner walls. This method comprises the steps of vapor depositing a mixed solution of a metal alkoxide and a chromic compound on the inner walls concurrently with introducing a carrier at a flow rate of 1-5000 kg/hr/coil at a temperature of 600-900&#xb0; C. under a pressure of 0-3 kg/cmto form a buffer layer on the inner walls; and vapor depositing a metal alkoxide as a barrier on the buffer layer; and vapor depositing an alkali metal/alkaline earth metal compound alone or mixed with metal alkoxide as a decoking layer on the barrier. A decoking layer may further be provided on the diffusion barrier.

Method of on-line coating of a film on the inner walls of the reaction tubes in a hydrocarbon pyrolysis reactor

A method of on-line coating a coat film on the inner wall of a reaction tube in a hydrocarbon pyrolysis reactor for preventing the formation and the deposit of coke on the inner walls. This method comprises the steps of vapor depositing a mixed solution of a metal alkoxide and a chromic compound on the inner walls concurrently with introducing a carrier at a flow rate of 1-5000 kg/hr/coil at a temperature of 600-900&deg; C. under a pressure of 0-3 kg/cm to form a buffer layer on the inner walls; and vapor depositing a metal alkoxide as a barrier on the buffer layer; and vapor depositing an alkali metal/alkaline earth metal compound alone or mixed with metal alkoxide as a decoking layer on the barrier. A decoking layer may further be provided on the diffusion barrier.

Method of on-line coating film on the inner walls of the reaction tubes in a hydrocarbon pyrolysis reactor

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Ulsan, South Korea

Ahn Seop Choi