International Rectifier Corporation

Infineon Technologies Americas Corp.

Ahmed Masood

Alberto Guerra

Hongying Helen Ding

Dong Wang

In one implementation, a power converter includes an output stage integrated circuit (IC) on a group III-V die, and a driver IC for driving the output stage IC, the driver IC fabricated on a group IV die. The power converter also includes a composite power switch split between the group III-V die and the group IV die, wherein a depletion mode group III-V transistor of the composite power switch is monolithically integrated in the group III-V die, and a group IV control switch of the composite power switch is monolithically integrated in the group IV die. As a result, the depletion mode group III-V transistor may be operated as an enhancement mode transistor.

Power converter including integrated driver for depletion mode group III-V transistor

In one implementation, a modular power converter having a reduced switching loss includes a package, a field-effect transistor (FET) including a gate terminal, a drain terminal, and a source terminal, and fabricated on a semiconductor die situated inside the package, and a driver circuit inside the package. The driver circuit is configured to drive the gate terminal of the FET. The driver circuit is further configured to sample a drain-to-source voltage (V) of the FET directly from the drain terminal and the source terminal, thereby enabling the reduced switching loss.

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Redondo Beach, CA, United States of America

Ahmed Masood