King Abdulaziz City for Science and Technology

University of California

Ahmed Alyamani

Steven P DenBaars

Abdulrahman Albadri

James Stephen Speck

Abdullah Ibrahim Alhassan

Evgenii Lutsenko

Aliaksei Vainilovich

Viacheslav Pavlovskii

Gennadii Yablonskii

Salman A Alfihed

Ahmed Alabbas Hamidalddin

Sergey Ivanov

Irina Sedova

Sergei Sorokin

Sergei Gronin

A method for fabricating an (Al,Ga,In,B)N or III-nitride semiconductor device, including performing a growth of III-nitride or (Al,Ga,In,B)N material including a p-n junction with an active region and using metal-organic chemical vapor deposition (MOCVD) or chemical vapor deposition; and performing a subsequent regrowth of n-type (Al,Ga,In,B)N or III-nitride material using MOCVD or chemical vapor deposition while utilizing a pulsed delta n-type doping scheme to realize an abrupt, smoother surface of the n-type material and a higher carrier concentration in the n-type material. In another example, the method comprises forming a mesa having a top surface; and activating magnesium in the p-type GaN of the (Al,Ga,In,B)N material through openings in the top surface that expose the p-type GaN's surface. The openings are formed before or after the subsequent regrowth of the tunnel junction.

Metal organic chemical vapor depostion (MOCVD) tunnel junction growth in III-nitride devices

The invention provides a laser converter for converting a laser radiation of shorter wavelength to a laser radiation of longer wavelength using a single stage conversion. The laser converter comprises a laser diode for emitting a laser radiation in a first wavelength range, a cylindrical microlens for transferring and focusing the laser radiation to a laser chip and the laser chip for absorbing the laser radiation and emitting the laser radiation in a second wavelength range.

Laser converter for emitting a green laser

Growing community of inventors

Riyadh, Saudi Arabia

Ahmed Alyamani