Kepler Computing Inc.

Ahmad Tavakoli

Sasikanth Manipatruni

Amrita Mathuriya

Rajeev Kumar Dokania

Tanay Gosavi

Noriyuki Sato

Debo Olaosebikan

Mustansir Yunus Mukadam

Described herein is a memory sensing scheme that improves noise margin. In at least one embodiment, one or more circuitries are described that are coupled to a bit-cell, wherein the bit-cell is coupled to a plate-line and a bit-line, wherein the one or more circuitries are to sense a bit-value stored in the bit-cell based, at least in part, on a first floating charge on a plate-line and a second floating charge on a bit-line.

Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell

Growing community of inventors

San Francisco, CA, United States of America

Ahmad Tavakoli