Samsung Electronics Co., Ltd.

Ah-Young Cheon

Kwang-Yong Yang

Myeong-Cheol Kim

Yong-jin Kim

Kyungin Choi

Dohyoung Kim

Ki-Il Kim

Yoonhae Kim

Myungil Kang

Dong-kwon Kim

Seung-mo Ha

Ki-il Kim

Young-Mook Oh

Seung-Jin Mun

Semiconductor devices are providing including a first isolation region configured to define a first fin active region protruding from a substrate, first gate patterns on the first fin active region, and a first epitaxial region in the first fin active region between the first gate patterns. Sidewalls of the first epitaxial region have first inflection points so that an upper width of the first epitaxial region is greater than a lower width of the first epitaxial region.

Semiconductor devices having FIN active regions

An active pattern structure may include a substrate including an active pattern array defined by a plurality of trenches including first to third trenches, and first to third isolation patterns in the first to third trenches, respectively. The active pattern array may include a plurality of first and second active patterns extending in a first direction, and the first to third trenches may be between the first and second active patterns and may include different widths from each other. The active pattern array may include an active pattern group including one of the first active patterns and one of the second active patterns sequentially arranged in a second direction substantially perpendicular to the first direction. Each of the first and second active patterns may have a minute width.

Active pattern structure and semiconductor device including the same

Semiconductor devices having fin active regions

A method of forming a pattern includes forming a mask pattern on a substrate; etching the substrate by deep reactive ion etching (DRIE) and by using the mask pattern as an etch mask; partially removing the mask pattern to expose a portion of an upper surface of the substrate; and etching the exposed portion of the upper surface of the substrate. In the method, when a pattern is formed by DRIE, an upper portion of the pattern does not protrude or scarcely protrudes, and scallops of a sidewall of the pattern are smooth, and thus a conformal material layer may be easily formed on a surface of the pattern.

Method of forming a pattern

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Suwon-si, South Korea

Ah-Young Cheon