Broadcom Corporation

Other

Avago Technologies International Sales Pte. Limited

Agnes Woo

Fang Lu

Kenneth R Kindsfater

Ichiro Fujimori

David K Chin

Anil Tammineedi

John Perzow

Pieter Vorenkamp

Lawrence M Burns

Akira Ito

Donald George McMullin

Jungwoo Song

Stephen A Jantzi

Anilkumar V Tammineedi

Todd Lee Brooks

Khim Leng Low

Chun-Ying Chen

Ark-Chew Wong

Derek Tam

Marcel Lugthart

Joseph Aziz

Andrew Chen

Arya Behzad

Xiangdong Chen

Wei Xia

Henry Chen

Guang-Jye Shiau

Victor Fong

Jung Wang

Chao-Yang Lu

Pascal Tran

David Chin

Disclosed are various embodiments of FinFET semiconductor devices. A pair of matched capacitors can be formed that share a common source, drain and/or channel. Accordingly, the capacitance characteristics of each capacitor can be manufactured such that they are similar to one another. A resistor manufactured by employing FinFET techniques is also described. The resistor can be manufactured with an effective length that is greater than a distance traversed along a substrate by the resistor.

FinFET devices

Embodiments described herein provide a structure for finger capacitors, and more specifically metal-oxide-metal ('MOM') finger capacitors and arrays of finger capacitors. A plurality of Shallow Trench Isolation (STI) formations is associated with every other column of capacitor fingers, with poly fill formations covering the STI formations to provide a more robust and efficient structure.

Metal finger capacitor for high-K metal gate processes

Power over Ethernet (PoE) communication systems provide power and data communications over the same communications link, where a power source device (PSE) provides DC power to a powered device (PD). The DC power is transmitted simultaneously over the same communications medium with the high speed data from one node to the other node. The PSE controller measures the voltage, current, and temperature of the outgoing and incoming DC supply lines to characterize the power requirements of the PD. The PSE controller may detect and validate a compatible PD, determine a power classification signature for the validated PD, supply power to the PD, monitor the power, and reduce or remove the power from the PD when the power is no longer requested or required. If the PSE finds the PD to be non-compatible, the PSE can prevent the application of power to that PD device, protecting the PD from possible damage.

Apparatus and method for multipoint detection in power-over-ethernet detection mode

An apparatus and method for multi-point detection in a power source equipment (PSE) device is provided. During multi-point detection, a series of at least four currents is sequentially applied to a link port of the PSE device. Each current is applied during a different measurement interval. A voltage measurement sample is obtained for each of the measurement intervals. A difference in voltage between alternating voltage samples is determined and used by a detection module to determine whether a valid power device is coupled to the link port of the PSE.

Apparatus and method for multi-point detection in power-over-Ethernet detection mode

Power over Ethernet (PoE) communication systems provide power and data communications over the same communications link, where a power source device (PSE) provides DC power (for example, 48 volts DC) to a powered device (PD). The DC power is transmitted simultaneously over the same communications medium with the high speed data from one node to the other node. The PSE typically includes a controller that controls the DC power provided to the PD at the second node of the communications link. The PSE controller measures the voltage, current, and temperature of the outgoing and incoming DC supply lines to characterize the power requirements of the PD. In addition, the PSE controller may detect and validate a compatible PD, determine a power classification signature for the validated PD, supply power to the PD, monitor the power, and reduce or remove the power from the PD when the power is no longer requested or required. During detection, if the PSE finds the PD to be non-compatible, the PSE can prevent the application of power to that PD device, protecting the PD from possible damage.

Power over ethernet controller integrated circuit architecture

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range.

System and method for ESD protection

An upstream amplifier is integrated on a substrate with a digital-to-analog converter (DAC) to form an integrated circuit. In an embodiment, a low-pass filter is also integrated on the substrate. The output signal level of the upstream amplifier is controllable. In embodiments, fine adjustments are made to the output signal level of the upstream amplifier by varying a bias current of the DAC. A software control bit is used to switch between a power-on mode of operation and a power-down mode of operation. The upstream amplifier transmits in a burst mode. The power consumption of the upstream amplifier scales with the amplifier's output signal level. A high degree of matching is attained between the positive and negative paths of the upstream amplifier. This provides high immunity from common-mode disturbances such as substrate noise, clock spurs, and glitches caused by a gain change.

Integrated upstream amplifier for cable modem and cable set-top boxes

According to one exemplary embodiment, an active termination circuit includes at least one active termination branch, where the at least one active termination branch includes at least one transistor for providing an active termination output. The at least one active termination branch further includes an amplifier driving the at least one transistor, where the amplifier has a non-inverting input coupled to the active termination output via a feedback network. The amplifier controls a current flowing through the at least one transistor so as to provide the active termination output. The active termination output can be provided at a drain of the at least one transistor, where a source of the at least one transistor is coupled to ground through a degeneration transistor and a tail current sink.

Switchable passive termination circuits

A Power over Ethernet electrostatic discharge protection circuit has a first diode with an anode coupled to a positive power port and a cathode coupled to an ESD protection port. A second diode has an anode coupled to ground and a cathode coupled to the positive power port. A third diode has an anode coupled to a negative power port and a cathode coupled to the ESD protection port.

Power over Ethernet electrostatic discharge protection circuit

An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant polarity that is opposite a dopant polarity of the low doped well and the diffusion area. A distance between the low doped well and the diffusion area determines a triggering voltage of the ESD device. A depletion region is formed between the low doped well and the substrate when a reverse bias voltage is applied to the ESD device. A current discharging path is formed between the first contact and the second contact when the depletion region comes in to contact with the diffusion area. The substrate is biased by a connection to the second contact. Alternatively, an additional diffusion area with the same dopant polarity, connected to a third contact, biases the substrate.

ESD protection for high voltage applications

An integrated receiver with channel selection and image rejection substantially implemented on a single CMOS integrated circuit is described. A receiver front end provides programmable attenuation and a programmable gain low noise amplifier. Frequency conversion circuitry advantageously uses LC filters integrated onto the substrate in conjunction with image reject mixers to provide sufficient image frequency rejection. Filter tuning and inductor Q compensation over temperature are performed on chip. The filters utilize multi track spiral inductors. The filters are tuned using local oscillators to tune a substitute filter, and frequency scaling during filter component values to those of the filter being tuned. In conjunction with filtering, frequency planning provides additional image rejection. The advantageous choice of local oscillator signal generation methods on chip is by PLL out of band local oscillation and by direct synthesis for in band local oscillator. The VCOs in the PLLs are centered using a control circuit to center the tuning capacitance range. A differential crystal oscillator is advantageously used as a frequency reference. Differential signal transmission is advantageously used throughout the receiver. ESD protection is provided by a pad ring and ESD clamping structure that maintains signal integrity. Also provided are shunts at each pin to discharge ESD build up. The shunts utilize a gate boosting structure to provide sufficient small signal RF performance, and minimal parasitic loading.

Integrated upstream amplifier for cable modems and cable set-top boxes

Active termination and switchable passive termination circuits

Apparatus and method for classifying a powered device (PD) in a power source equipment (PSE) controller

An integrated circuit can include an I/O pad, an internal circuit, an inductor, an electrostatic discharge (ESD) protection circuit, and an ESD clamp. The internal circuit can be biased with a first voltage supply and a second voltage supply, where the internal circuit is connected to the I/O pad at a first node. The ESD protection circuit can be connected between the first node and a second node. The inductor can be connected between the second node and a third voltage supply. Further, the ESD clamp can be connected between the second node and the second voltage supply.

ESD configuration for low parasitic capacitance I/O

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Encino, CA, United States of America

Agnes Woo