Versum Materials Us, LLC

Agnes Derecskei

Matthias Stender

Bradley James Brennan

Mark Leonard O'Neill

Xiaobo Shi

Laura M Matz

Ming-Shih Tsai

Rung-Je Yang

Blake J Lew

Chris Keh-Yeuan Li

Pao-Chia Pan

Chad Chang-Tse Hsieh

This invention pertains to compositions, methods and systems that can be used in chemical mechanical planarization (CMP) of a tungsten containing semiconductor device. CMP slurries comprising bicyclic amidine additives provide low dishing and low erosion topography.

Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

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Tempe, AZ, United States of America

Agnes Derecskei