Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Schott Solar Ag

Agata Lachowicz

Berthold Schum

Henning Nagel

Markus Fiedler

Knut Vaas

Joerg Horzel

Gabriele Blendin

Heinrich Blanke

Jens Dirk Moschner

A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.

Method for the wet-chemical etching back of a solar cell emitter

A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.

Alkaline pickling process

The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.

Method for producing a solar cell

A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SiPand SiPOare removed.

Method for forming a dopant profile

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Karlstein, Germany

Agata Lachowicz