Samsung Electronics Co., Ltd.

Aee Young Park

Doo-Hwan Park

Seongho Park

Kyoungpil Park

Eun-Chul Seo

Kyungmin Chung

A method of manufacturing a semiconductor device may include forming a hardmask layer on a substrate, forming a first mold pattern on the hardmask layer using a first photolithography process, conformally forming a spacer layer on the first mold pattern and on portions of the hardmask layer exposed by the first mold pattern, forming a first mold layer using a second photolithography process. The first mold layer may have a first opening that exposes a portion of the spacer layer. The method may include forming a spacer pattern by anisotropically etching the portion of the spacer layer exposed by the first opening until a portion of a top surface of the hardmask layer is exposed, and using the spacer pattern as an etching mask to pattern the hardmask layer.

Growing community of inventors

Yongin-si, South Korea

Aee Young Park